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STF11NM50N

Trans MOSFET N-CH 500V 8.5A 3-Pin(3+Tab) TO-220FP Tube

Quantity Unit Price(USD) Ext. Price
1 $1.765 $1.76
10 $1.547 $15.47
30 $1.410 $42.30
100 $1.270 $127.00
500 $1.207 $603.50
1000 $1.180 $1,180.00

Inventory:5,663

*The price is for reference only.
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Submit your quote request for STF11NM50N using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of STF11NM50N

The STF11NM50N is a cutting-edge N-channel Power MOSFET that showcases the latest advancements in technology. Through the utilization of the second generation of MDmesh™ technology, this device offers unparalleled performance and efficiency. By incorporating a vertical structure along with a unique strip layout, it achieves remarkably low on-resistance and gate charge, setting new standards in the industry. This makes it an ideal choice for high efficiency converters where performance is critical

Key Features

  • Fully tested and reliable
  • Low voltage operation enabled
  • Surface mount package available

Application

SWITCHING

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid STF11NM50N Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS Part Package Code TO-220AB
Package Description FLANGE MOUNT, R-PSFM-T3 Pin Count 3
Reach Compliance Code not_compliant ECCN Code EAR99
Factory Lead Time 52 Weeks Samacsys Manufacturer STMicroelectronics
Avalanche Energy Rating (Eas) 150 mJ Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 500 V
Drain Current-Max (Abs) (ID) 9 A Drain Current-Max (ID) 9 A
Drain-source On Resistance-Max 0.47 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB JESD-30 Code R-PSFM-T3
JESD-609 Code e3 Number of Elements 1
Number of Terminals 3 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 25 W
Pulsed Drain Current-Max (IDM) 36 A Qualification Status Not Qualified
Surface Mount NO Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Transistor Application SWITCHING Transistor Element Material SILICON

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