STF11N65M5
Robust and reliable N-channel MOSFET for DC bus application
Inventory:7,976
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
-
Part Number : STF11N65M5
-
Package/Case : TO-220FP
-
Brand : ST
-
Components Classification : Single FETs, MOSFETs
-
Datesheet : STF11N65M5 DataSheet (PDF)
-
Series : STF11N65M5
Overview of STF11N65M5
The STF11N65M5 Power MOSFET is a game-changer for applications requiring high power and superior efficiency. Its innovative vertical process technology and well-established horizontal layout result in an extremely low on-resistance, setting a new standard for power management. Whether it's for server power supplies or solar inverters, this device offers exceptional performance and optimal energy usage
Key Features
- Excellent thermal performance
- Low leakage current
- High voltage tolerance
Application
SWITCHINGSpecifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Source Content uid | STF11N65M5 | Part Life Cycle Code | Active |
Ihs Manufacturer | STMICROELECTRONICS | Package Description | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
Factory Lead Time | 15 Weeks, 6 Days | Samacsys Manufacturer | STMicroelectronics |
Avalanche Energy Rating (Eas) | 130 mJ | Case Connection | ISOLATED |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 650 V |
Drain Current-Max (Abs) (ID) | 9 A | Drain Current-Max (ID) | 9 A |
Drain-source On Resistance-Max | 0.48 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-220AB | JESD-30 Code | R-PSFM-T3 |
Number of Elements | 1 | Number of Terminals | 3 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Operating Temperature-Min | -55 °C | Package Body Material | PLASTIC/EPOXY |
Package Shape | RECTANGULAR | Package Style | FLANGE MOUNT |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | Polarity/Channel Type | N-CHANNEL |
Power Dissipation-Max (Abs) | 25 W | Pulsed Drain Current-Max (IDM) | 36 A |
Surface Mount | NO | Terminal Form | THROUGH-HOLE |
Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Transistor Application | SWITCHING | Transistor Element Material | SILICON |
Warranty & Returns
Warranty, Returns, and Additional Information
-
QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
-
Shipping and Package
Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.
Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
-
Payment
For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.
If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.
STD150N3LLH6
STripFET VI DeepGATE
STFW4N150
Trans MOSFET N-CH 1.5KV 4A 3-Pin(3+Tab) TO-3PF Tube
STGW60V60DF
Trench gate field-stop IGBT, V series 600 V, 60 A very high speed
STX0560
Fast-switching power transistor with high-voltage capability
STP3N150
MOSFET 1500V 6Ohm 2.5A N-Channel
STF13N60M2
Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) TO-220FP Tube
STF24N60M2
MOSFET N-Ch 600V 0.168Ohm 18A MDmesh M2
STP11NM80
MOSFET N-Ch 800 Volt 11 Amp Power MDmesh"
ST13007DFP
Bipolar Transistors - BJT
STD30NF03LT4
MOSFET N-CH 30V 30A DPAK
MPS2907AG
MPS2907AG: PNP Bipolar Transistor for Small-Signal Applications
MMBTA42LT3G
Low Power NPN General Purpose Transistor
DMP210DUFB4-7
X2-DFN1006-3 ROHS
NTMFS4C05NT1G
5-pin surface-mount small-outline flat lead (SO-FL) package
CSD17382F4T
This MOSFET has a power dissipation of 500mW at 8V and a VGS(th) of 1.2V at 250uA
IPP50R299CP
With its advanced features, IPP50R299CP stands out as a premier choice for MOSFET transistor needs
SIR826DP-T1-GE3
80V N-Channel Transistor MOSFET with a current rating of 25A designed for PowerPAK SO package in Tape and Reel form
2N6213
2N6213 is categorized under Bipolar Transistors, specifically Power BJT, indicating its suitability for high-power circuitry
IRF6607
Transistor IRF6607
AUIRF7759L2TR
15-pin Surface Mount Package