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STF10N65K3

Trans MOSFET N-CH 650V 10A 3-Pin(3+Tab) TO-220FP Tube

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Overview of STF10N65K3

The STF10N65K3 is a MOSFET transistor with a number of impressive specifications. With a drain source voltage (Vds) of 650V and a continuous drain current (Id) of 10A, this N-channel transistor is capable of handling high power applications. Its on resistance (Rds(on)) of 1ohm ensures efficient performance, while the threshold voltage (Vgs) of 3V allows for precise control over its operation. Whether used in industrial or automotive settings, the STF10N65K3 delivers reliable and consistent performance

Key Features

  • Precise timing and synchronization achieved
  • Scalable architecture supported
  • Data integrity protected

Application

  • Industrial
  • Power Management

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs Mfr STMicroelectronics
Series SuperMESH3™ Package Tube
Product Status Active FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 1Ohm @ 3.6A, 10V Vgs(th) (Max) @ Id 4.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 42 nC @ 10 V Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1180 pF @ 25 V FET Feature -
Power Dissipation (Max) 35W (Tc) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Through Hole Supplier Device Package TO-220FP
Package / Case TO-220-3 Full Pack Base Product Number STF10

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