• STD3NK80ZT4 DPAK
STD3NK80ZT4 DPAK

STD3NK80ZT4

Trans MOSFET N-CH 800V 2.5A 3-Pin(2+Tab) DPAK T/R

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Overview of STD3NK80ZT4

The STD3NK80ZT4 is an N-channel Power MOSFET that offers high efficiency and reliability in various power applications. This MOSFET is designed to handle high current and voltage levels, making it suitable for power management in industrial and automotive systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • G: Gate
  • D: Drain
  • S: Source
  • B: Body

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the STD3NK80ZT4 MOSFET for a visual representation.

Key Features

  • High Current and Voltage Ratings: The STD3NK80ZT4 can handle high current and voltage levels, making it suitable for power applications.
  • Low RDS(on): This MOSFET offers low on-state resistance, resulting in reduced power dissipation and improved efficiency.
  • Fast Switching Speed: With its fast switching characteristics, the STD3NK80ZT4 enhances system performance and responsiveness.
  • Enhanced Thermal Performance: The MOSFET is designed for efficient heat dissipation, ensuring stable operation under high loads.

Note: For detailed technical specifications, please refer to the STD3NK80ZT4 datasheet.

Application

  • Power Management Systems: Ideal for power management functions in industrial and automotive applications.
  • Motor Control: Suitable for motor control applications due to its high current handling capability.
  • Power Supplies: Used in power supply units for efficient power distribution and regulation.

Functionality

The STD3NK80ZT4 N-channel Power MOSFET is designed to efficiently switch high power loads in various applications. It provides reliable power management and control in demanding environments.

Usage Guide

  • Power Connections: Connect the Drain (D) and Source (S) pins to the load for power switching operations.
  • Gate Control: Apply appropriate voltage levels to the Gate (G) pin to control the MOSFET switching.
  • Thermal Management: Ensure proper heat sinking and thermal management to maintain safe operating temperatures.

Frequently Asked Questions

Q: Is the STD3NK80ZT4 suitable for automotive applications?
A: Yes, the STD3NK80ZT4 is designed to meet the requirements of automotive power systems and can be used in automotive applications.

Equivalent

For similar functionalities, consider these alternatives to the STD3NK80ZT4:

  • STW9NK90Z: A comparable N-channel Power MOSFET with similar performance characteristics.
  • STD7NM60N: This MOSFET offers high efficiency and reliability for power applications, suitable as an alternative to the STD3NK80ZT4.
  • STP16NF06: Another N-channel Power MOSFET option with high current and voltage ratings for power management applications.

STD3NK80ZT4

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid STD3NK80ZT4 Part Life Cycle Code Active
Ihs Manufacturer STMICROELECTRONICS Part Package Code TO-252
Package Description SMALL OUTLINE, R-PSSO-G2 Pin Count 3
Reach Compliance Code not_compliant ECCN Code EAR99
Factory Lead Time 50 Weeks Samacsys Manufacturer STMicroelectronics
Additional Feature AVALANCHE RATED Avalanche Energy Rating (Eas) 170 mJ
Configuration SINGLE WITH BUILT-IN DIODE DS Breakdown Voltage-Min 800 V
Drain Current-Max (Abs) (ID) 2.5 A Drain Current-Max (ID) 2.5 A
Drain-source On Resistance-Max 4.5 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252 JESD-30 Code R-PSSO-G2
JESD-609 Code e3 Moisture Sensitivity Level 1
Number of Elements 1 Number of Terminals 2
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY Package Shape RECTANGULAR
Package Style SMALL OUTLINE Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 70 W
Pulsed Drain Current-Max (IDM) 10 A Qualification Status Not Qualified
Surface Mount YES Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30 Transistor Application SWITCHING
Transistor Element Material SILICON

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