STD3NK80ZT4
Trans MOSFET N-CH 800V 2.5A 3-Pin(2+Tab) DPAK T/R
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Part Number : STD3NK80ZT4
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Package/Case : DPAK
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Brands : ST
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Components Categories : Single FETs, MOSFETs
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Datesheet : STD3NK80ZT4 DataSheet (PDF)
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Series : STD3NK80ZT4
The STD3NK80ZT4 is an N-channel Power MOSFET that offers high efficiency and reliability in various power applications. This MOSFET is designed to handle high current and voltage levels, making it suitable for power management in industrial and automotive systems. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the STD3NK80ZT4 MOSFET for a visual representation. Note: For detailed technical specifications, please refer to the STD3NK80ZT4 datasheet. Functionality The STD3NK80ZT4 N-channel Power MOSFET is designed to efficiently switch high power loads in various applications. It provides reliable power management and control in demanding environments. Usage Guide Q: Is the STD3NK80ZT4 suitable for automotive applications? For similar functionalities, consider these alternatives to the STD3NK80ZT4:Overview of STD3NK80ZT4
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the STD3NK80ZT4 is designed to meet the requirements of automotive power systems and can be used in automotive applications.Equivalent
![STD3NK80ZT4 STD3NK80ZT4](/files/uploads/product/b/428c8b25-fb08-4729-ae20-08dbbf1058dd.webp)
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Source Content uid | STD3NK80ZT4 | Part Life Cycle Code | Active |
Ihs Manufacturer | STMICROELECTRONICS | Part Package Code | TO-252 |
Package Description | SMALL OUTLINE, R-PSSO-G2 | Pin Count | 3 |
Reach Compliance Code | not_compliant | ECCN Code | EAR99 |
Factory Lead Time | 50 Weeks | Samacsys Manufacturer | STMicroelectronics |
Additional Feature | AVALANCHE RATED | Avalanche Energy Rating (Eas) | 170 mJ |
Configuration | SINGLE WITH BUILT-IN DIODE | DS Breakdown Voltage-Min | 800 V |
Drain Current-Max (Abs) (ID) | 2.5 A | Drain Current-Max (ID) | 2.5 A |
Drain-source On Resistance-Max | 4.5 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-252 | JESD-30 Code | R-PSSO-G2 |
JESD-609 Code | e3 | Moisture Sensitivity Level | 1 |
Number of Elements | 1 | Number of Terminals | 2 |
Operating Mode | ENHANCEMENT MODE | Operating Temperature-Max | 150 °C |
Package Body Material | PLASTIC/EPOXY | Package Shape | RECTANGULAR |
Package Style | SMALL OUTLINE | Peak Reflow Temperature (Cel) | 260 |
Polarity/Channel Type | N-CHANNEL | Power Dissipation-Max (Abs) | 70 W |
Pulsed Drain Current-Max (IDM) | 10 A | Qualification Status | Not Qualified |
Surface Mount | YES | Terminal Finish | Matte Tin (Sn) - annealed |
Terminal Form | GULL WING | Terminal Position | SINGLE |
Time@Peak Reflow Temperature-Max (s) | 30 | Transistor Application | SWITCHING |
Transistor Element Material | SILICON |
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