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STD2NB80T4

N-Channel MOSFET with voltage rating of 800 volts and current rating of 1.9 amps

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Overview of STD2NB80T4

The STD2NB80T4 is a N-channel power MOSFET designed for high-speed, high-power switching applications in various electronic circuits. This MOSFET features a low on-resistance and high drain current capability, making it suitable for power management and amplification.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • V(BR)DSS: Drain-Source Breakdown Voltage
  • V(GS)TH: Gate-Source Threshold Voltage
  • I(D): Drain Current
  • P(D): Power Dissipation
  • R(ΘJA): Thermal Resistance

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the STD2NB80T4 MOSFET for a visual representation.

Key Features

  • N-Channel Power MOSFET: The STD2NB80T4 is an N-channel MOSFET for efficient power switching.
  • Low On-Resistance: This MOSFET offers a low on-resistance to minimize power losses during operation.
  • High Drain Current Capability: With a high drain current rating, the STD2NB80T4 can handle high power loads.
  • Fast Switching Speed: The STD2NB80T4 is designed for high-speed switching applications, ensuring rapid response times.
  • Enhanced Power Management: This MOSFET is suitable for power management tasks in electronic circuits.

Note: For detailed technical specifications, please refer to the STD2NB80T4 datasheet.

Application

  • Power Supplies: Ideal for use in power supply units for efficient voltage regulation.
  • Motor Control: Suitable for motor control applications due to its high current handling capability.
  • Audio Amplification: Can be utilized in audio amplifiers for powering speakers and ensuring high-quality sound output.

Functionality

The STD2NB80T4 N-channel MOSFET is designed for high-power switching applications, providing efficient power management and amplification capabilities.

Usage Guide

  • Gate Connection: Connect the gate (G) pin to the control signal for switching the MOSFET.
  • Drain and Source Connections: Connect the drain (D) pin to the load and the source (S) pin to the ground.
  • Current and Voltage Rating: Ensure that the MOSFET's current and voltage ratings are suitable for the application.

Frequently Asked Questions

Q: Is the STD2NB80T4 suitable for high-frequency switching applications?
A: Yes, the STD2NB80T4 is designed for high-speed switching, making it suitable for high-frequency applications.

Equivalent

For similar functionalities, consider these alternatives to the STD2NB80T4:

  • IRF740: A power N-channel MOSFET with comparable performance characteristics to the STD2NB80T4.
  • BSC090N03LSG: Another N-channel MOSFET suitable for high-power switching applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS N
Technology Si Mounting Style SMD/SMT
Package / Case TO-252-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 800 V
Id - Continuous Drain Current 1.9 A Rds On - Drain-Source Resistance 6.5 Ohms
Vgs - Gate-Source Voltage - 30 V, + 30 V Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 55 W
Channel Mode Enhancement Series STD2NB80
Brand STMicroelectronics Configuration Single
Fall Time 17 ns Height 2.4 mm
Length 6.6 mm Product Type MOSFET
Rise Time 10 ns Factory Pack Quantity 2500
Subcategory MOSFETs Transistor Type 1 N-Channel
Type MOSFET Typical Turn-On Delay Time 12 ns
Width 6.2 mm Unit Weight 0.011640 oz

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