STD2NB80T4
N-Channel MOSFET with voltage rating of 800 volts and current rating of 1.9 amps
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Part Number : STD2NB80T4
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Package/Case : TO-252-3
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Brand : Stmicroelectronics
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Components Classification : Single FETs, MOSFETs
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Datesheet : STD2NB80T4 DataSheet (PDF)
The STD2NB80T4 is a N-channel power MOSFET designed for high-speed, high-power switching applications in various electronic circuits. This MOSFET features a low on-resistance and high drain current capability, making it suitable for power management and amplification. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the STD2NB80T4 MOSFET for a visual representation. Note: For detailed technical specifications, please refer to the STD2NB80T4 datasheet. Functionality The STD2NB80T4 N-channel MOSFET is designed for high-power switching applications, providing efficient power management and amplification capabilities. Usage Guide Q: Is the STD2NB80T4 suitable for high-frequency switching applications? For similar functionalities, consider these alternatives to the STD2NB80T4:Overview of STD2NB80T4
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the STD2NB80T4 is designed for high-speed switching, making it suitable for high-frequency applications.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | N |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | TO-252-3 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 800 V |
Id - Continuous Drain Current | 1.9 A | Rds On - Drain-Source Resistance | 6.5 Ohms |
Vgs - Gate-Source Voltage | - 30 V, + 30 V | Minimum Operating Temperature | - 65 C |
Maximum Operating Temperature | + 150 C | Pd - Power Dissipation | 55 W |
Channel Mode | Enhancement | Series | STD2NB80 |
Brand | STMicroelectronics | Configuration | Single |
Fall Time | 17 ns | Height | 2.4 mm |
Length | 6.6 mm | Product Type | MOSFET |
Rise Time | 10 ns | Factory Pack Quantity | 2500 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Type | MOSFET | Typical Turn-On Delay Time | 12 ns |
Width | 6.2 mm | Unit Weight | 0.011640 oz |
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