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STB45N50DM2AG

Trans MOSFET N-CH 500V 35A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R

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Overview of STB45N50DM2AG

The STB45N50DM2AG is a high voltage N-channel Power MOSFET designed to meet the needs of the most demanding high efficiency converters. Part of the MDmesh™ DM2 fast recovery diode series, this MOSFET boasts very low recovery charge (Qrr) and time (trr) combined with low RDS(on), making it an ideal choice for bridge topologies and ZVS phase-shift converters. Whether you're working on a project that requires high performance and reliability or you're looking to improve the efficiency of your power conversion system, the STB45N50DM2AG delivers on all fronts

Key Features

  • Designed for automotive applications and AEC-Q101 qualified
  • Fast-recovery body diode
  • Extremely low gate charge and input capacitance
  • Low on-resistance
  • 100% avalanche tested
  • Extremely high dv/dt ruggedness
  • Zener-protected

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer STMicroelectronics Product Category MOSFET
RoHS Details Technology Si
Mounting Style SMD/SMT Package / Case TO-263-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 500 V Id - Continuous Drain Current 35 A
Rds On - Drain-Source Resistance 84 mOhms Vgs - Gate-Source Voltage - 25 V, + 25 V
Vgs th - Gate-Source Threshold Voltage 4 V Qg - Gate Charge 57 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 250 W Channel Mode Enhancement
Qualification AEC-Q101 Tradename MDmesh
Series STB45N50DM2AG Brand STMicroelectronics
Configuration Single Fall Time 9.8 ns
Height 4.6 mm Length 10.4 mm
Product Power MOSFETs Product Type MOSFET
Rise Time 9.4 ns Factory Pack Quantity 1000
Subcategory MOSFETs Type High Voltage
Typical Turn-Off Delay Time 73.5 ns Typical Turn-On Delay Time 20 ns
Width 9.35 mm Unit Weight 0.139332 oz

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