• packageimg
packageimg

STB25N80K5

Trans MOSFET N-CH 800V 19.5A 3-Pin(2+Tab) D2PAK T/R

Inventory:9,785

  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Rapid Quote

Submit your quote request for STB25N80K5 using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of STB25N80K5

STMicroelectronics' STB25N80K5 Power MOSFET transistor is a game-changer in the world of high-speed switching applications. Designed to meet the demands of power supplies, motor control, and automotive systems, this transistor boasts an impressive maximum drain-source voltage of 800V and a continuous drain current of 15A. Its low on-resistance of 0.25 ohms ensures minimal power losses, while its fast switching speeds and low gate charge add to its efficiency and reliability

Key Features

  • Ultra-compact design
  • Exceptional performance capability
  • Zener-diode protected

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series SuperMESH5™ Product Status Active
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V Current - Continuous Drain (Id) @ 25°C 19.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 260mOhm @ 19.5A, 10V
Vgs(th) (Max) @ Id 5V @ 100µA Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V
Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 1600 pF @ 100 V
Power Dissipation (Max) 250W (Tc) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Supplier Device Package TO-263 (D2PAK)
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Base Product Number STB25

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package

    Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment

    For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

HGTP20N60C3

HGTP20N60C3

HGTP20N60C3 - Transistors: Insulated Gate Bipolar Transistors (IGBT)
NTD20P06LG

NTD20P06LG

Single P-Channel DPAK Power MOSFET capable of handling -60 V and -15.5 A
PMZ290UNE2YL

PMZ290UNE2YL

Trans MOSFET N-CH 20V 1.2A 3-Pin DFN T/R
IXCH36N250

IXCH36N250

2500V N-Channel Insulated Gate Bipolar Transistor (IGBT) Chip, 73A, 595W, TO-247 Package
BTA12-600BWRG

BTA12-600BWRG

TRIAC 600V 126A 3-Pin(3+Tab) TO-220AB Insulated Tube
MJH11022G

MJH11022G

With its high power handling capabilities, this transistor is suitable for various applications
NIF9N05CLT1G

NIF9N05CLT1G

N-channel 59V 2.6A Transistor MOSFET in SOT-223 Package
SI4835BDY

SI4835BDY

It is advised to use SI4835DDY-T1-GE3 in place of the discontinued MOSFET SI4835BDY
CM200DU-12F

CM200DU-12F

N-channel IGBT module with 600V and 200A rating
2SB1258

2SB1258

Trans Darlington PNP 100V 6A 30000mW TO-220F