STB200NF04T4
High-performance N-Channel Mosfet
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $5.810 | $5.81 |
10 | $5.134 | $51.34 |
30 | $4.721 | $141.63 |
100 | $3.885 | $388.50 |
Inventory:8,029
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Part Number : STB200NF04T4
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Package/Case : TO-263-3
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Brand : STMicroelectronics
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Components Classification : Single FETs, MOSFETs
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Datesheet : STB200NF04T4 DataSheet (PDF)
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Series : STB200NF04
Overview of STB200NF04T4
The STB200NF04T4 is a robust N-channel MOSFET ideal for high-power applications. Its impressive specs include a 40V drain-source voltage, 120A continuous drain current, and a mere 0.0033ohm on-resistance. With a Vgs test voltage of 10V and a threshold voltage of 4V, this transistor offers a perfect balance of performance and efficiency. The TO-263 case style allows for easy mounting and excellent thermal management, while its maximum operating temperature of 175°C ensures reliable operation under harsh conditions. Whether used in automotive, industrial, or other applications, the STB200NF04T4 is a top choice for demanding projects
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Series | STripFET™ II | Product Status | Obsolete |
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 40 V | Current - Continuous Drain (Id) @ 25°C | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V | Rds On (Max) @ Id, Vgs | 3.7mOhm @ 90A, 10V |
Vgs(th) (Max) @ Id | 4V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 210 nC @ 10 V |
Vgs (Max) | ±20V | Input Capacitance (Ciss) (Max) @ Vds | 5100 pF @ 25 V |
Power Dissipation (Max) | 310W (Tc) | Operating Temperature | -55°C ~ 175°C (TJ) |
Mounting Type | Surface Mount | Supplier Device Package | D2PAK |
Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Base Product Number | STB200N |
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Warranty, Returns, and Additional Information
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Parts Quality Guarantee: 365 days
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