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STB18NF25

Trans MOSFET N-CH 250V 17A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R

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Overview of STB18NF25

STMicroelectronics has raised the bar with the development of the STB18NF25 Power MOSFET. By utilizing their specialized STripFET process, they have created a product that excels in minimizing input capacitance and gate charge. This feature makes the STB18NF25 perfect for serving as the primary switch in advanced high-efficiency isolated DC-DC converters. Whether used in telecom, computer, or other applications with low gate charge driving requirements, this MOSFET delivers outstanding performance and reliability. With its cutting-edge technology and unmatched efficiency, the STB18NF25 is a game-changer in the world of power MOSFETs

Key Features

  • AEC-Q101 qualified
  • Exceptional dv/dt capability
  • 100% avalanche tested
  • Low gate charge

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer STMicroelectronics Product Category MOSFET
RoHS Details Technology Si
Mounting Style SMD/SMT Package / Case TO-263-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 250 V Id - Continuous Drain Current 17 A
Rds On - Drain-Source Resistance 140 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 2 V Qg - Gate Charge 29.3 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
Pd - Power Dissipation 110 W Channel Mode Enhancement
Qualification AEC-Q101 Tradename STripFET
Series STB18NF25 Brand STMicroelectronics
Configuration Single Fall Time 8.8 ns
Forward Transconductance - Min 14 S Product Type MOSFET
Rise Time 17.2 ns Factory Pack Quantity 1000
Subcategory MOSFETs Transistor Type 1 N-Channel
Type STripFET II Power MOSFET Typical Turn-Off Delay Time 21 ns
Typical Turn-On Delay Time 8.8 ns Unit Weight 0.139332 oz

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