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STB140NF55T4

Trans MOSFET N-CH 55V 80A 3-Pin(2+Tab) D2PAK T/R

Quantity Unit Price(USD) Ext. Price
1 $2.167 $2.17
10 $1.876 $18.76
30 $1.693 $50.79
100 $1.507 $150.70
500 $1.423 $711.50
1000 $1.386 $1,386.00

Inventory:9,229

*The price is for reference only.
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Overview of STB140NF55T4

STMicroelectronics presents the STB140NF55T4, a N-channel Power MOSFET that raises the bar for power conversion applications. As part of the MDmesh family, this MOSFET delivers exceptional performance with a maximum drain-source voltage of 55V and a continuous drain current of 140A, catering to high-power switching requirements. With a low ON-resistance of 3.7 mΩ at a gate-source voltage of 10V, the STB140NF55T4 excels in minimizing power losses and optimizing efficiency in power conversion circuits. Its impressive avalanche energy rating of 550mJ underscores its durability and reliability in demanding environments, making it a standout choice for robust applications. Housed in a TO-263 package, this MOSFET ensures efficient thermal management and easy integration onto printed circuit boards. Additionally, the STB140NF55T4 adheres to RoHS standards, emphasizing its environmental responsibility and compliance

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series STripFET™ II Product Status Active
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 55 V Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 8mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 142 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5300 pF @ 25 V
Power Dissipation (Max) 300W (Tc) Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Supplier Device Package D2PAK
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Base Product Number STB140

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