STB11N65M5
N-Channel Silicon FET
Inventory:7,745
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
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Part Number : STB11N65M5
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Package/Case : TO-263-3
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Brand : STMicroelectronics
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Components Classification : Single FETs, MOSFETs
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Datesheet : STB11N65M5 DataSheet (PDF)
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Series : STB11N65M5
Overview of STB11N65M5
This innovative N-channel Power MOSFET, based on the MDmesh™ M5 vertical process technology combined with the PowerMESH™ horizontal layout, boasts extremely low on-resistance. As a result, it is particularly well-suited for applications requiring high power and superior efficiency. With its cutting-edge design, this device is poised to revolutionize the industry
Key Features
- Compact power device
- Small thermal resistance
- Excellent reliability
- Low input capacitance
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Series | MDmesh™ V | Product Status | Active |
FET Type | N-Channel | Technology | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss) | 650 V | Current - Continuous Drain (Id) @ 25°C | 9A (Tc) |
Drive Voltage (Max Rds On, Min Rds On) | 10V | Rds On (Max) @ Id, Vgs | 480mOhm @ 4.5A, 10V |
Vgs(th) (Max) @ Id | 5V @ 250µA | Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
Vgs (Max) | ±25V | Input Capacitance (Ciss) (Max) @ Vds | 644 pF @ 100 V |
Power Dissipation (Max) | 85W (Tc) | Operating Temperature | 150°C (TJ) |
Mounting Type | Surface Mount | Supplier Device Package | TO-263 (D2PAK) |
Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Base Product Number | STB11 |
Warranty & Returns
Warranty, Returns, and Additional Information
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QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
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Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
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