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STB11N65M5

N-Channel Silicon FET

Inventory:7,745

  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

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Submit your quote request for STB11N65M5 using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of STB11N65M5

This innovative N-channel Power MOSFET, based on the MDmesh™ M5 vertical process technology combined with the PowerMESH™ horizontal layout, boasts extremely low on-resistance. As a result, it is particularly well-suited for applications requiring high power and superior efficiency. With its cutting-edge design, this device is poised to revolutionize the industry

Key Features

  • Compact power device
  • Small thermal resistance
  • Excellent reliability
  • Low input capacitance

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series MDmesh™ V Product Status Active
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 480mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V
Vgs (Max) ±25V Input Capacitance (Ciss) (Max) @ Vds 644 pF @ 100 V
Power Dissipation (Max) 85W (Tc) Operating Temperature 150°C (TJ)
Mounting Type Surface Mount Supplier Device Package TO-263 (D2PAK)
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Base Product Number STB11

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

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