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STB100N10F7

The STB100N10F7 MOSFET transistor made by STMicroelectronics features N-channel design

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Overview of STB100N10F7

The STB100N10F7 is a power MOSFET featuring a low on-state resistance and high-speed switching capabilities. It is designed for use in power management applications where efficient power handling is required.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the STB100N10F7 MOSFET for a visual representation.

Key Features

  • Low On-State Resistance: Provides efficient power handling with minimal voltage drop.
  • High-Speed Switching: Enables rapid switching between conducting and non-conducting states.
  • High Power Dissipation: Capable of dissipating high power levels while maintaining stable operation.
  • Low Gate Threshold Voltage: Allows for easy control of the MOSFET with low input voltage.
  • Enhanced Thermal Performance: Designed for improved thermal dissipation to prevent overheating.

Note: For detailed technical specifications, please refer to the STB100N10F7 datasheet.

Application

  • Power Management Systems: Ideal for use in power management systems requiring efficient power handling.
  • Switching Circuits: Suitable for high-speed switching applications in various electronic circuits.
  • Motor Control: Can be used in motor control applications for efficient power regulation.

Functionality

The STB100N10F7 power MOSFET offers low on-state resistance and high-speed switching, making it a reliable component for power management and switching applications.

Usage Guide

  • Connection: Connect the Gate (G), Drain (D), and Source (S) pins according to the circuit requirements.
  • Gating Voltage: Apply the appropriate gating voltage to the Gate pin to control the switching behavior.

Frequently Asked Questions

Q:Can the STB100N10F7 be used in high-frequency applications?
A:Yes, the STB100N10F7 is capable of high-speed switching suitable for high-frequency applications.

Equivalent

For similar functionalities, consider these alternatives to the STB100N10F7:

  • STP100N10F7: This is a comparable power MOSFET from the same manufacturer with similar performance characteristics.
  • IRF100N: An alternative power MOSFET offering similar power handling capabilities and switching speed.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series DeepGATE™, STripFET™ VII Product Status Active
FET Type N-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 8mOhm @ 40A, 10V
Vgs(th) (Max) @ Id 4.5V @ 250µA Gate Charge (Qg) (Max) @ Vgs 61 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 4369 pF @ 50 V
Power Dissipation (Max) 150W (Tc) Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Supplier Device Package TO-263 (D2PAK)
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Base Product Number STB100

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