SSM6N357R,LF

Name: SSM6N357R,LF
Brand: Toshiba Semiconductor and Storage
Rating: 4.5 (10 reviews)

Low-loss, high-reliability N-channel MOSFETs for automotive and industrial use

Quantity	Unit Price(USD)	Ext. Price
1	$0.306	$0.31
200	$0.122	$24.40
500	$0.118	$59.00
1000	$0.116	$116.00

Inventory:9,023

*The price is for reference only.

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Part Number : SSM6N357R,LF
Package/Case : TSOP-6
Brand : Toshiba Semiconductor and Storage
Components Classification : FET, MOSFET Arrays
Datesheet : SSM6N357R,LF DataSheet (PDF)
Series : SSM6N357R

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Overview of SSM6N357R,LF

Mosfet Array 60V 650mA (Ta) 1.5W (Ta) Surface Mount 6-TSOP-F

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Status	Active	Technology	Si
Configuration	Dual	Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	650mA (Ta)	Rds On (Max) @ Id, Vgs	1.8Ohm @ 150mA, 5V
Vgs(th) (Max) @ Id	2V @ 1mA	Gate Charge (Qg) (Max) @ Vgs	1.5nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds	60pF @ 12V	Power - Max	1.5W (Ta)
Operating Temperature	150°C	Mounting Type	Surface Mount
Package / Case	TSOP-6	Supplier Device Package	6-TSOP-F
Base Product Number	SSM6N357	Manufacturer	Toshiba
Product Category	MOSFET	RoHS	Details
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	2 Channel	Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	650 mA	Rds On - Drain-Source Resistance	1.8 Ohms
Vgs - Gate-Source Voltage	- 12 V, + 12 V	Vgs th - Gate-Source Threshold Voltage	1.3 V
Qg - Gate Charge	1.5 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Pd - Power Dissipation	1 W
Channel Mode	Enhancement	Qualification	AEC-Q101
Tradename	MOSV	Series	SSM6N357R
Brand	Toshiba	Forward Transconductance - Min	500 mS
Product Type	MOSFET	Factory Pack Quantity	3000
Subcategory	MOSFETs	Typical Turn-Off Delay Time	3000 ns
Typical Turn-On Delay Time	990 ns	Unit Weight	0.000705 oz

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