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SSM3K56FS,LF

U-MOSVI FET with a drain current capability of 0.8A and a voltage withstand of up to 20V, characterized by its low input capacitance of 55pF

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Overview of SSM3K56FS,LF

The SSM3K56FS,LF is a P-channel enhancement mode FET with a built-in diode. It features a compact and efficient design suitable for various low-power electronic applications. This FET is commonly used for power management and switching circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the datasheet for precise details.)

  • G: Gate
  • S: Source
  • D: Drain

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SSM3K56FS,LF for a visual representation.

Key Features

  • P-Channel Enhancement Mode FET: Offers efficient power management capabilities.
  • Built-In Diode: Includes a built-in diode for reverse current protection and circuit efficiency.
  • Compact Design: The SSM3K56FS,LF comes in a small package, making it ideal for space-constrained applications.
  • Low Power Consumption: Consumes minimal power, suitable for low-power electronic devices.

Note: For detailed technical specifications, please refer to the SSM3K56FS,LF datasheet.

Application

  • Power Management: Ideal for power management circuits in electronic devices.
  • Switching Circuits: Suitable for use in switching applications for efficient power control.
  • Low-Power Electronics: Commonly used in low-power electronic devices for power efficiency.

Functionality

The SSM3K56FS,LF is a P-channel enhancement mode FET designed for power management and switching applications. It provides a reliable and compact solution for low-power electronic circuit requirements.

Usage Guide

  • Gate Connection: Connect the Gate (G) pin to the control signal for FET operation.
  • Source and Drain: Connect the Source (S) and Drain (D) pins as per the circuit requirements.
  • Built-In Diode: Utilize the built-in diode for reverse current protection in the circuit.

Frequently Asked Questions

Q: Is the SSM3K56FS,LF suitable for high-temperature environments?
A: Yes, the SSM3K56FS,LF is designed to operate efficiently in high-temperature environments with proper heat dissipation measures.

Equivalent

For similar functionalities, consider these alternatives to the SSM3K56FS,LF:

  • SSM6K19FS,LF: Another P-channel FET with enhanced features for power management applications.
  • SSM1K32FS,LF: A compact FET option with similar characteristics suitable for low-power circuit designs.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case SOT-416-3 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 20 V
Id - Continuous Drain Current 800 mA Rds On - Drain-Source Resistance 235 mOhms
Vgs - Gate-Source Voltage - 8 V, + 8 V Vgs th - Gate-Source Threshold Voltage 400 mV
Qg - Gate Charge 1 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 500 mW
Channel Mode Enhancement Tradename U-MOSVII-H
Series SSM3K56 Brand Toshiba
Configuration Single Height 0.7 mm
Length 1.6 mm Product Type MOSFET
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 8.5 ns
Typical Turn-On Delay Time 5.5 ns Width 0.8 mm
Unit Weight 0.000085 oz

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