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SPW35N60C3

Infineon SPW35N60C3 N-channel MOSFET Transistor, 34.6 A, 650 V, 3-Pin TO-247

Quantity Unit Price(USD) Ext. Price
1 $8.287 $8.29
10 $7.322 $73.22
30 $6.734 $202.02
100 $5.422 $542.20

Inventory:6,772

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Overview of SPW35N60C3

The SPW35N60C3 is a 600V CoolMOS™ Power MOSFET that provides efficient power switching capabilities in various electronic applications. This MOSFET features a low on-state resistance and high input capacitance, making it suitable for power supply, inverter, and motor control applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Gate (G): Control pin for switching the MOSFET
  • Drain (D): Power terminal connected to the load


Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SPW35N60C3 MOSFET for a visual representation.

Key Features

  • High Voltage Rating: With a 600V rating, the SPW35N60C3 is suitable for high-voltage applications.
  • Low On-State Resistance: The MOSFET offers low conduction losses due to its low on-state resistance.
  • High Input Capacitance: The high input capacitance allows for efficient switching performance.
  • Fast Switching Speed: The SPW35N60C3 offers fast turn-on and turn-off times for improved efficiency.
  • Temperature Resilience: This MOSFET can operate within a wide temperature range, ensuring reliability in various environments.

Note: For detailed technical specifications, please refer to the SPW35N60C3 datasheet.

Application

  • Power Supplies: Ideal for use in power supply circuits for efficient voltage regulation.
  • Motor Control: Suitable for motor control applications due to its high voltage handling capability.
  • Inverters: Used in inverter circuits for converting DC power to AC power efficiently.

Functionality

The SPW35N60C3 MOSFET is designed for high-power applications, providing efficient power switching and voltage control for electronic systems.

Usage Guide

  • Gate Control: Apply appropriate voltage levels to the Gate pin to control the switching behavior of the MOSFET.
  • Load Connection: Connect the Load to the Drain terminal to control the power flow through the MOSFET.
  • Ground Connection: Ensure a proper ground connection to the Source terminal for correct operation.

Frequently Asked Questions

Q: What is the maximum voltage rating of the SPW35N60C3?
A: The SPW35N60C3 has a maximum voltage rating of 600V, suitable for high-power applications.

Q: Is the SPW35N60C3 suitable for high-speed switching applications?
A: Yes, the SPW35N60C3 offers fast switching speeds, making it suitable for high-speed switching requirements.

Equivalent

For similar functionalities, consider these alternatives to the SPW35N60C3:

  • IRFP460: A power MOSFET with comparable voltage and current ratings suitable for similar applications.
  • FDP8878: This MOSFET offers high efficiency and power handling capabilities like the SPW35N60C3.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series CoolMOS™ Package Tube
Product Status Active FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 34.6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 100mOhm @ 21.9A, 10V Vgs(th) (Max) @ Id 3.9V @ 1.9mA
Gate Charge (Qg) (Max) @ Vgs 200 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 4500 pF @ 25 V Power Dissipation (Max) 313W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) Mounting Type Through Hole
Supplier Device Package PG-TO247-3-1 Package / Case TO-247-3
Base Product Number SPW35N60

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