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SPB80P06PGATMA1

Infineon SPB80P06PGATMA1 P-channel MOSFET, 80 A, 60 V SIPMOS, 3-Pin D2PAK

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Overview of SPB80P06PGATMA1

The Infineon SPB80P06PGATMA1 Power MOSFET sets a new benchmark in power management components with its outstanding specifications and advanced technology. Offering a drain-source voltage rating of 60 volts and a continuous drain current of 80 amperes, this MOSFET delivers high efficiency and performance in a compact TO-220 package. The low on-state resistance of typically 8.5 milliohms ensures minimal power loss, making it an ideal choice for applications requiring precision control and reliability

Key Features

  • - Transistor-Polarity: P-Channel
  • - Technology: Si
  • - Number-of-Channels: 1 Channel
  • - Package-Case: TO-263-3
  • - Unit-Weight: 0.068654 oz
  • - Series: XPB80P06
  • - Mounting-Style: SMD/SMT
  • - Transistor-Type: 1 P-Channel
  • - Drain-Source-Voltage: 80 V
  • - Current-Continuous-Drain: 6 A
  • - Rds-On-Max: 0.0045 Ohm
  • - Vgs-Threshold: -2.5 V

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series SIPMOS® Product Status Active
FET Type P-Channel Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25°C 80A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 23mOhm @ 64A, 10V
Vgs(th) (Max) @ Id 4V @ 5.5mA Gate Charge (Qg) (Max) @ Vgs 173 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 5033 pF @ 25 V
Power Dissipation (Max) 340W (Tc) Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount Supplier Device Package PG-TO263-3-2
Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Base Product Number SPB80P06

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