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SMMBT2222AWT1G

-Pin SC-70 NPN Transistor 40V 0.6A

Quantity Unit Price(USD) Ext. Price
1 $0.104 $0.10
200 $0.041 $8.20
500 $0.039 $19.50
1000 $0.038 $38.00

Inventory:8,567

*The price is for reference only.
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Overview of SMMBT2222AWT1G

The SMMBT2222AWT1G is a NPN bipolar junction transistor (BJT) designed for general-purpose amplification and switching applications. This transistor features a maximum collector current of 600mA and a continuous collector-emitter voltage of 40V, making it suitable for a wide range of electronic circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • E: Emitter
  • B: Base
  • C: Collector

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SMMBT2222AWT1G transistor for a visual representation.

Key Features

  • NPN Bipolar Junction Transistor: The SMMBT2222AWT1G is a NPN transistor suitable for amplification and switching applications.
  • High Collector Current: With a maximum collector current of 600mA, this transistor can handle moderate current levels in circuits.
  • Low Voltage Operation: Operates with a continuous collector-emitter voltage of 40V, making it compatible with various low-voltage systems.
  • General-Purpose Use: Ideal for general-purpose electronic circuits requiring NPN transistors for signal amplification and switching.

Note: For detailed technical specifications, please refer to the SMMBT2222AWT1G datasheet.

Application

  • Signal Amplification: Suitable for amplifying weak signals in audio and radio frequency circuits.
  • Switching Circuits: Can be used to control the switching of electronic components in digital and analog circuits.
  • Driver Circuits: Ideal for driving loads such as relays, LEDs, and small motors in various applications.

Functionality

The SMMBT2222AWT1G NPN transistor serves as a versatile component in electronic circuits, providing amplification and switching capabilities to enable various functionalities.

Usage Guide

  • Connection: Connect the emitter (E), base (B), and collector (C) pins as per the circuit requirements.
  • Biasing: Apply the appropriate base current and voltage to control the transistor's operation in amplification or switching modes.
  • Load Connection: Connect the load to the collector terminal to utilize the amplified or switched signal.

Frequently Asked Questions

Q: Can the SMMBT2222AWT1G handle higher current levels than 600mA?
A: The SMMBT2222AWT1G is rated for a maximum collector current of 600mA. Exceeding this limit may lead to device overheating or failure.

Q: Is the SMMBT2222AWT1G suitable for high-frequency applications?
A: While the SMMBT2222AWT1G can handle moderate frequencies, it may not be optimal for high-frequency applications due to its internal capacitance and transition times.

Equivalent

For alternatives with similar functionalities, consider the following:

  • 2N2222: A widely used NPN transistor with comparable characteristics to the SMMBT2222AWT1G, suitable for general-purpose applications.
  • BC546: This is another NPN transistor commonly used for amplification and switching tasks, offering similar performance to the SMMBT2222AWT1G.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Active Compliance PbAHP
Package Type SC-70-3 / SOT-323-3 Case Outline 419-04
MSL Type 1 MSL Temp (°C) 260
Container Type REEL Container Qty. 3000
ON Target N Polarity NPN
Type General Purpose VCE(sat) Max (V) 1
IC Cont. (A) 0.6 VCEO Min (V) 40
VCBO (V) 75 VEBO (V) 6
VBE(sat) (V) 2 hFE Min 100
hFE Max 300 fT Min (MHz) 300
PTM Max (W) 0.15 Pricing ($/Unit) $0.0392Sample

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