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SI7738DP-T1-GE3

MOSFET 150V Vds 20V Vgs PowerPAK SO-8

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Overview of SI7738DP-T1-GE3

The SI7738DP-T1-GE3 is a dual P-Channel MOSFET with a low on-resistance and high current-handling capability. It is designed for use in power management applications where efficient switching and power handling are crucial.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • GATE1: Gate terminal for MOSFET 1
  • SOURCE1: Source terminal for MOSFET 1
  • DRAIN1: Drain terminal for MOSFET 1
  • GATE2: Gate terminal for MOSFET 2
  • SOURCE2: Source terminal for MOSFET 2
  • DRAIN2: Drain terminal for MOSFET 2

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the SI7738DP-T1-GE3 for a visual representation.

Key Features

  • Dual P-Channel MOSFET: Provides two P-Channel MOSFETs in a single package for enhanced power management capabilities.
  • Low On-Resistance: The SI7738DP-T1-GE3 features low on-resistance for minimal power loss and efficient operation.
  • High Current Handling: Capable of handling high currents, making it suitable for power switching applications.
  • Wide Voltage Range: Operates within a wide voltage range for versatility in different circuit configurations.
  • Temperature Protection: Includes temperature protection features to prevent overheating and ensure device longevity.

Note: For detailed technical specifications, please refer to the SI7738DP-T1-GE3 datasheet.

Application

  • Power Management: Ideal for use in power management circuits for efficient voltage regulation and power switching.
  • DC-DC Converters: Suitable for DC-DC converter applications where high current handling and low on-resistance are required.
  • Battery Charging Systems: Can be used in battery charging systems to regulate and control charging currents.

Functionality

The SI7738DP-T1-GE3 is a dual P-Channel MOSFET designed to handle high currents with low on-resistance, making it an efficient component for power management applications. It provides reliable switching and power handling capabilities in various circuit configurations.

Usage Guide

  • GATE Connection: Connect the GATE pins to the appropriate driving circuitry for controlling the MOSFETs.
  • SOURCE and DRAIN Connections: Connect the SOURCE and DRAIN pins for each MOSFET to the corresponding circuit elements.
  • Temperature Management: Ensure proper heat sinking or thermal management to prevent overheating during operation.

Frequently Asked Questions

Q: Is the SI7738DP-T1-GE3 suitable for automotive applications?
A: Yes, the SI7738DP-T1-GE3 is designed for automotive-grade applications, meeting the required specifications for automotive electronics.

Equivalent

For similar functionalities, consider these alternatives to the SI7738DP-T1-GE3:

  • SIP32431DUL-T1-GE4: This dual P-Channel MOSFET offers similar performance characteristics and features for power management applications.
  • SI7469DP-T1-GE3: Another dual P-Channel MOSFET option with comparable specifications and reliability for power switching needs.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case PowerPAK-SO-8 Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 150 V
Id - Continuous Drain Current 30 A Rds On - Drain-Source Resistance 38 mOhms
Vgs - Gate-Source Voltage + 20 V Vgs th - Gate-Source Threshold Voltage 4 V
Qg - Gate Charge 35 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 96 W
Channel Mode Enhancement Tradename TrenchFET
Series SI7 Brand Vishay Semiconductors
Configuration Single Fall Time 10 ns
Forward Transconductance - Min 22 S Height 1.04 mm
Length 6.15 mm Product Type MOSFET
Rise Time 10 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 25 ns Typical Turn-On Delay Time 15 ns
Width 5.15 mm Part # Aliases SI7738DP-GE3
Unit Weight 0.017870 oz

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