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SI3932DV-T1-GE3

High Efficiency N-channel Voltage-Controlled Switch

Inventory:7,748

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Overview of SI3932DV-T1-GE3

The SI3932DV-T1-GE3 is a dual N-channel MOSFET power transistor designed for use various electronic applications. It is part of the Vishay Siliconix family of MOSFs and offers high efficiency and reliability.

Pinout SI3932DV-T1-GE3 Pin
(Note: The pin configuration above is a general. Refer the specific datasheet for precise details.)

Key

  • Dual N-Channel MOSFET: The SI3932DV-T1-GE3 includes two independent N-channel MOSFs, providing versatility in power control applications.
  • Low On Resistance: This transistor has a low on-state resistance, minimizing power losses and improving efficiency in circuits.
  • High Current Handling Capability: With its robust design, the SI3932DV-T1-GE3 handle high currents, making it suitable for power management applications.
  • Fast Switching Speed: This transistor fast switching speeds, allowing for quick response times in digital circuits.
  • SMD Package: The SI3932DV-T-GE3 comes in a compact surface mount package, making it easy to integrate into PCB designs.

Note: For detailed technical specifications, please refer to the3932DV-T1-GE3 datasheet provided by Vishay Siliconix.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style SMD/SMT Package / Case TSOP-6
Transistor Polarity N-Channel Number of Channels 2 Channel
Vds - Drain-Source Breakdown Voltage 30 V Id - Continuous Drain Current 3.7 A
Rds On - Drain-Source Resistance 58 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1.2 V Qg - Gate Charge 6 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 1.4 W Channel Mode Enhancement
Tradename TrenchFET Series SI3
Brand Vishay Semiconductors Configuration Dual
Fall Time 10 ns Forward Transconductance - Min 10 S
Product Type MOSFET Rise Time 15 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 2 N-Channel Typical Turn-Off Delay Time 10 ns
Typical Turn-On Delay Time 10 ns Part # Aliases SI3932DV-GE3
Unit Weight 0.000705 oz

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