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SI3443BDV-T1-E3

Trans MOSFET P-CH 20V 3.6A 6-Pin TSOP T/R

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Overview of SI3443BDV-T1-E3

Product SI3443BDV-T1-E3 is a MOSFET with P channel transistor polarity, designed for applications requiring a continuous drain current of 3.6A and a drain source voltage of 20V. With an on resistance of 80mΩ, this transistor operates at an extended temperature range from -55°C to +150°C, making it suitable for a variety of environments. The transistor case style is TSOP, with 6 pins and a maximum output current of 1.1A. The package type is TSOP, and the termination type is SMD for easy installation on printed circuit boards. The power dissipation is rated at 1.1W under normal operating conditions and 20mW in standby mode. A pulse current of up to 20A can be handled by this MOSFET, providing reliability in high-demand scenarios. The threshold voltage is typically -1.4V, with a maximum gate-source voltage of -12V

Key Features

  • TrenchFET® power MOSFET
  • 100 % Rg tested

    • Specifications

    The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

    Manufacturer Vishay Product Category MOSFET
    RoHS Details Technology Si
    Mounting Style SMD/SMT Package / Case TSOP-6
    Transistor Polarity P-Channel Number of Channels 1 Channel
    Vds - Drain-Source Breakdown Voltage 20 V Id - Continuous Drain Current 4.7 A
    Rds On - Drain-Source Resistance 100 mOhms Vgs - Gate-Source Voltage - 12 V, + 12 V
    Vgs th - Gate-Source Threshold Voltage 1.4 V Qg - Gate Charge 9 nC
    Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
    Pd - Power Dissipation 2 W Channel Mode Enhancement
    Tradename TrenchFET Series SI3
    Brand Vishay Semiconductors Configuration Single
    Product Type MOSFET Factory Pack Quantity 3000
    Subcategory MOSFETs Part # Aliases SI3443BDV-T1-BE3 SI3443BDV-E3
    Unit Weight 0.000705 oz

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