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PMN55ENEH

MOSFET PMN55ENE/SOT457/SC-74

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Overview of PMN55ENEH

N-Channel 60 V 4.5A (Ta) 560mW (Ta), 6.25W (Tc) Surface Mount 6-TSOP

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series TrenchMOS™ Product Status Not For New Designs
FET Type N-Channel Technology Si
Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25°C 4.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 60mOhm @ 3.4A, 10V
Vgs(th) (Max) @ Id 2.7V @ 250µA Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V
Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 646 pF @ 30 V
Power Dissipation (Max) 560mW (Ta), 6.25W (Tc) Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount Supplier Device Package 6-TSOP
Package / Case TSOP-6 Base Product Number PMN55
Manufacturer Nexperia Product Category MOSFET
RoHS Details Mounting Style SMD/SMT
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 60 V Id - Continuous Drain Current 4.5 A
Rds On - Drain-Source Resistance 60 mOhms Vgs - Gate-Source Voltage - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage 1.3 V Qg - Gate Charge 19 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 1.4 W Channel Mode Enhancement
Brand Nexperia Configuration Single
Fall Time 13 ns Forward Transconductance - Min 18.2 S
Product Type MOSFET Rise Time 13 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 33 ns
Typical Turn-On Delay Time 9 ns Part # Aliases 934660265125
Unit Weight 0.000705 oz

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