• packageimg
packageimg

PMN50EPEX

Efficient voltage control for high-speed switching and amplificatio

Inventory:9,238

  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Rapid Quote

Submit your quote request for PMN50EPEX using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of PMN50EPEX

Featuring innovative design and superior functionality, the PMN50EPEX P-channel enhancement mode Field-Effect Transistor (FET) is housed in a sleek SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package. With Trench MOSFET technology at its core, this transistor boasts exceptional performance capabilities in a conveniently compact size. Whether utilized in industrial machinery, automotive systems, or consumer electronics, the PMN50EPEX ensures optimal power utilization and reliable functionality

Key Features

  • Silicon-based surface passivation
  • Fully encapsulated for moisture protection
  • Precise control of power supply voltage
  • Robustness against thermal and electrical stress

Application

  • Voltage regulator
  • Low-pass filter
  • Current limiter

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Status Active FET Type P-Channel
Technology Si Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 4.6A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 45mOhm @ 4.6A, 10V Vgs(th) (Max) @ Id 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 793 pF @ 15 V Power Dissipation (Max) 560mW (Ta), 6.25mW (Tc)
Operating Temperature 150°C (TJ) Mounting Type Surface Mount
Supplier Device Package 6-TSOP Package / Case TSOP-6
Base Product Number PMN50 Manufacturer Nexperia
Product Category MOSFET RoHS Details
Mounting Style SMD/SMT Transistor Polarity P-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 30 V
Id - Continuous Drain Current 6 A Rds On - Drain-Source Resistance 45 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 3 V
Qg - Gate Charge 20 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 1.4 W
Channel Mode Enhancement Brand Nexperia
Configuration Single Fall Time 19 ns
Forward Transconductance - Min 14.2 S Product Type MOSFET
Rise Time 19 ns Factory Pack Quantity 3000
Subcategory MOSFETs Typical Turn-Off Delay Time 36 ns
Typical Turn-On Delay Time 6 ns Part # Aliases 934660267115
Unit Weight 0.000705 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package

    Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment

    For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

IRFD9120PBF

IRFD9120PBF

MOSFET P-Channel 100V 1A HVMDIP4 Vishay IRFD9120PBF P-channel MOSFET Transistor, 1 A, 100 V, 4-Pin HVMDIP
DMC2450UV-7

DMC2450UV-7

0.45W Enhancement FET Pair with 20V Drain-Source Voltage and 12V Gate-Source Voltage
2SC5658T2LR

2SC5658T2LR

Small Signal Bipolar Transistor, VMT3, NPN, 3 PIN, Silicon
IRF7311TRPBF

IRF7311TRPBF

IRF7311TRPBF Infineon RL MOSFET
IRFB3306GPBF

IRFB3306GPBF

N-channel silicon power MOSFET with a voltage rating of 60V and a maximum current handling capacity of 160A in a TO-220AB package, supplied in a tube
MDD3752RH

MDD3752RH

Channel MOSFET 40V 43A 3-Pin with 2+Tab
NTR1P02LT1

NTR1P02LT1

This ROHS compliant component comes in a SOT-23-3 package, also known as TO-236-3
2N6517BU

2N6517BU

TO-92 Packaged NPN Transistor for General Purpose Applications, Rated at 350V and 500mA - Bulk
TIM1112-4

TIM1112-4

Versatile N-channel transistor for diverse RF application
ST2310DHI

ST2310DHI

ST2310DHI is a pre-biased NPN high-voltage fast-switching bipolar transistor