• packageimg
packageimg

PMN230ENEAX

Reliable and rugged 60V N-channel MOSFET for demanding applications

Inventory:6,664

  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Rapid Quote

Submit your quote request for PMN230ENEAX using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of PMN230ENEAX

With its advanced design, the PMN230ENEAX sets new standards in performance and efficiency for N-channel enhancement mode FETs. The use of Trench MOSFET technology ensures precise control and high switching speed, making it suitable for a wide range of applications. Its SOT457 (SC-74) package allows for easy surface-mounting, making installation a breeze

Key Features

  • Silicon Germanium material
  • Fast transition time
  • Low electromagnetic interference
  • Robust design for harsh environments

Application

  • Temperature sensor
  • Audio amplifier
  • PWM generator

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Status Active FET Type N-Channel
Technology Si Drain to Source Voltage (Vdss) 60 V
Current - Continuous Drain (Id) @ 25°C 1.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Max) @ Id, Vgs 222mOhm @ 1.8A, 10V Vgs(th) (Max) @ Id 2.7V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 3.8 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 110 pF @ 30 V Power Dissipation (Max) 625mW (Ta), 5.4W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) Grade Automotive
Qualification AEC-Q101 Mounting Type Surface Mount
Supplier Device Package 6-TSOP Package / Case TSOP-6
Base Product Number PMN230 Manufacturer Nexperia
Product Category MOSFET RoHS Details
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 60 V
Id - Continuous Drain Current 2 A Rds On - Drain-Source Resistance 222 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage 1.3 V
Qg - Gate Charge 5 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 1.14 W
Channel Mode Enhancement Brand Nexperia
Configuration Single Fall Time 5 ns
Forward Transconductance - Min 6.2 S Product Type MOSFET
Rise Time 8 ns Factory Pack Quantity 3000
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 13 ns Typical Turn-On Delay Time 6 ns
Part # Aliases 934069659115 Unit Weight 0.000705 oz

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package

    Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment

    For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

IXFK120N20

IXFK120N20

Inquire for specifics
2SJ649-AZ

2SJ649-AZ

This product is a P-channel MOSFET in TO-220 package
IRF3706

IRF3706

N-Channel Power MOSFET IRF3706, Through Hole TO-220AB Package
IRFR4104TRPBF

IRFR4104TRPBF

RL Infineon MOSFET IRFR4104TRPBF
GA200SA60S

GA200SA60S

Bus Switch Dual 24TSSOP IC FET
PSMN2R0-30YL,115

PSMN2R0-30YL,115

High power N-Channel 30 V Mosfet with low on-resistance
IXGH40N60C2

IXGH40N60C2

IGBT Transistor Chip N-Channel 600V 75A 300W TO-247AD Package
IPD65R250C6

IPD65R250C6

Infineon IPD65R250C6 is a high-performance N-channel MOSFET transistor boasting a current rating of 16 A and a voltage tolerance of 700 V
CM200DU-24H

CM200DU-24H

1200V Transistor Module
NJVNJD35N04T4G

NJVNJD35N04T4G

350V NPN Darlington Transistors, 2000@2V, 2A, 4A 45W DPAK