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PMDT290UNE,115

Trans MOSFET N-CH 20V 0.8A 6-Pin SOT-666 T/R

Inventory:8,212

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Overview of PMDT290UNE,115

Harnessing the power of dual N-channel enhancement mode technology, the PMDT290UNE offers superior performance and versatility in a sleek SOT666 package. This ultra-small FET is perfect for applications where space is limited, delivering high efficiency and power in a compact footprint. With its cutting-edge design and Trench MOSFET technology, the PMDT290UNE sets a new standard for innovative electronic components

Key Features

  • Safe and reliable design
  • Low power consumption
  • Fast response time

Application

  • Encoder interface
  • Voltage multiplier
  • Ground fault detector

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series TrenchMOS™ Product Status Not For New Designs
Technology MOSFET (Metal Oxide) Configuration 2 N-Channel (Dual)
FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 20V
Current - Continuous Drain (Id) @ 25°C 800mA Rds On (Max) @ Id, Vgs 380mOhm @ 500mA, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250µA Gate Charge (Qg) (Max) @ Vgs 0.68nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds 83pF @ 10V Power - Max 500mW
Operating Temperature -55°C ~ 150°C (TJ) Grade Automotive
Qualification AEC-Q101 Mounting Type Surface Mount
Package / Case SOT-563, SOT-666 Supplier Device Package SOT-666
Base Product Number PMDT290

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Warranty, Returns, and Additional Information

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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