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PMCM4401UNEZ

Trans MOSFET N-CH 20V 4.2A 4-Pin WLCSP T/R

Inventory:6,915

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Overview of PMCM4401UNEZ

N-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.

Key Features

  • Micropower consumption
  • Low current consumption
  • Thermal runaway prevention
  • Compliance to RoHS and WEEE directives

Application

  • Power management IC
  • Voltage regulator
  • Battery charger

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Status Active FET Type N-Channel
Technology Si Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 5.4A (Tj) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Gate Charge (Qg) (Max) @ Vgs 6.2 nC @ 4.5 V Vgs (Max) ±8V
Power Dissipation (Max) 400mW Operating Temperature 150°C (TJ)
Mounting Type Surface Mount Supplier Device Package 4-WLCSP (0.78x0.78)
Package / Case WLCSP-4 Base Product Number PMCM4401
Manufacturer Nexperia Product Category MOSFET
RoHS Details Mounting Style SMD/SMT
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 20 V Id - Continuous Drain Current 5.4 A
Rds On - Drain-Source Resistance 43 mOhms Vgs - Gate-Source Voltage - 8 V, + 8 V
Vgs th - Gate-Source Threshold Voltage 400 mV Qg - Gate Charge 9 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 1.3 W Channel Mode Enhancement
Brand Nexperia Configuration Single
Fall Time 10 ns Forward Transconductance - Min 22 S
Product Type MOSFET Rise Time 23 ns
Factory Pack Quantity 9000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 27 ns
Typical Turn-On Delay Time 4.4 ns Part # Aliases 934070325084
Unit Weight 0.000016 oz

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