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PBSS5160DS,115

Bipolar Transistors - BJT PBSS5160DS/SOT457/SC-74

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Overview of PBSS5160DS,115

Featuring a breakthrough in small signal technology, the PBSS5160DS is designed to deliver superior performance in a compact package. The PNP/PNP transistor pair offers low voltage operation, making it suitable for applications where space is limited and power efficiency is crucial. With its SOT457 (SC-74) SMD plastic package, the PBSS5160DS is easy to integrate into existing circuit designs. Its NPN complement, the PBSS4160DS, provides a versatile solution for complementary transistor pair requirements

Key Features

  • Suitable for a wide range of applications including industrial controls and telecommunications
  • Low thermal resistance reduces heat generation
  • Precise control over current and voltage
  • AEC-Q101 qualified ensures reliable operation in harsh environments
  • High speed switching capability for fast data transmission

Application

  • Fast response time
  • Long lifespan
  • Versatile applications

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Status Active Transistor Type 2 PNP (Dual)
Current - Collector (Ic) (Max) 770mA Voltage - Collector Emitter Breakdown (Max) 60V
Vce Saturation (Max) @ Ib, Ic 330mV @ 100mA, 1A Current - Collector Cutoff (Max) 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 500mA, 5V Power - Max 420mW
Frequency - Transition 185MHz Operating Temperature 150°C (TJ)
Grade Automotive Qualification AEC-Q100
Mounting Type Surface Mount Package / Case TSOP-6
Supplier Device Package 6-TSOP Base Product Number PBSS5160
Manufacturer Nexperia Product Category Bipolar Transistors - BJT
RoHS Details Mounting Style SMD/SMT
Transistor Polarity PNP Configuration Single
Collector- Emitter Voltage VCEO Max 60 V Collector- Base Voltage VCBO 80 V
Emitter- Base Voltage VEBO 5 V Collector-Emitter Saturation Voltage 250 mV
Maximum DC Collector Current 1 A Pd - Power Dissipation 700 mW
Gain Bandwidth Product fT 185 MHz Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 150 C Brand Nexperia
Continuous Collector Current - 1 A DC Current Gain hFE Max 200 at 1 mA, 5 V
Height 1 mm Length 3.1 mm
Product Type BJTs - Bipolar Transistors Factory Pack Quantity 3000
Subcategory Transistors Technology Si
Width 1.7 mm Part # Aliases 934058121115
Unit Weight 0.000394 oz

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    Parts Quality Guarantee: 365 days

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