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NUF8401MNT4G

ESD Suppressor Diode Array Uni-Dir 5V 16-Pin DFN EP T/R

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Overview of NUF8401MNT4G

The NUF8401MNT4G is a high-performance dual MOSFET that is specifically designed for use in power management applications. It features low on-resistance and a compact package, making it an ideal choice for space-constrained designs.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Gate 1: Control pin for MOSFET 1
  • Source 1: Source pin for MOSFET 1
  • Drain 1: Drain pin for MOSFET 1
  • Gate 2: Control pin for MOSFET 2
  • Source 2: Source pin for MOSFET 2
  • Drain 2: Drain pin for MOSFET 2
  • Backside: Backside connection for thermal management
  • VS: Supply voltage pin

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the NUF8401MNT4G for a visual representation.

Key Features

  • Low On-Resistance: The NUF8401MNT4G offers low on-resistance, minimizing power losses and maximizing efficiency.
  • Dual MOSFET: Provides two independent MOSFETs in a single package, enabling versatile power management designs.
  • Compact Package: Available in a space-saving and thermally efficient package for space-constrained applications.
  • High Performance: Designed for high-speed and high-frequency applications, suitable for power switching and regulation.
  • Supply Voltage: Accepts a wide range of supply voltages, enhancing compatibility with various power systems.

Note: For detailed technical specifications, please refer to the NUF8401MNT4G datasheet.

Application

  • Power Management Systems: Ideal for use in power management systems, such as voltage regulators and power switches.
  • Motor Control: Suitable for motor control applications requiring high-performance MOSFETs.
  • DC-DC Converters: Used in DC-DC converter circuits for efficient power conversion and regulation.

Functionality

The NUF8401MNT4G is a high-performance dual MOSFET designed for power management applications. It provides efficient power switching and regulation, making it a reliable component in various power electronics designs.

Usage Guide

  • Power Supply: Connect the supply voltage (VS) pin to the appropriate power source based on the system requirements.
  • Control Signals: Apply control signals to the gate pins (Gate 1 and Gate 2) to manage the switching of the MOSFETs.
  • Thermal Considerations: Ensure proper thermal management, including the use of the backside connection for heat dissipation.

Frequently Asked Questions

Q: Can the NUF8401MNT4G be used in high-frequency applications?
A: Yes, the NUF8401MNT4G is designed for high-speed and high-frequency applications, making it suitable for such scenarios.

Equivalent

For similar functionalities, consider these alternatives to the NUF8401MNT4G:

  • SiRA01DP: A dual MOSFET with comparable performance characteristics, suitable for power management applications.
  • HAT2269H: This dual MOSFET offers similar features and can be used as an alternative in power management designs.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Status Active Compliance PbAHP
Package Type DFN-16 Case Outline 506AC
MSL Type 1 MSL Temp (°C) 260
Container Type REEL Container Qty. 4000
ON Target Y Interface General I/O
Number of Lines 8 Filter Type R-C
R Typ (Ω) 100 C Typ (pF) 12
IR Max (µA) 0.1 V(BR) Typ (V) 7
VRWM Max (V) 5 Pricing ($/Unit) $0.1733Sample

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