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MMBT3906-7-F

Small signal PNP transistor with 40V voltage rating

Quantity Unit Price(USD) Ext. Price
20 $0.018 $0.36
200 $0.015 $3.00
600 $0.014 $8.40
3000 $0.013 $39.00
9000 $0.012 $108.00
21000 $0.012 $252.00

Inventory:8,339

*The price is for reference only.
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Overview of MMBT3906-7-F

The MMBT3906-7-F is a PNP silicon transistor that is commonly used for general amplification and switching applications.It features a maximum current rating of 200mA, making it suitable for low to medium power electronic circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Emitter (E): The emitter terminal of the transistor.
  • Base (B): The base terminal of the transistor.
  • Collector (C): The collector terminal of the transistor.

Circuit Diagram

Include a circuit diagram illustrating the use of the MMBT3906-7-F transistor in common amplifier and switching circuits for a visual representation.

Key Features

  • PNP Silicon Transistor: The MMBT3906-7-F is a PNP transistor suitable for amplification and switching applications.
  • Low to Medium Power: With a maximum current rating of 200mA, this transistor is ideal for low to medium power circuits.
  • Compact Size: The MMBT3906-7-F comes in a small SOT-23 package, saving board space in compact designs.
  • High Voltage Rating: The transistor can handle voltages up to 40V, enabling it to be used in a variety of circuit configurations.
  • Low Cost: An affordable option for basic transistor needs in electronic projects.

Note: For detailed technical specifications, please refer to the MMBT3906-7-F datasheet.

Application

  • Signal Amplification: Commonly used to amplify weak signals in audio and radio frequency circuits.
  • Switching Circuits: Suitable for switching applications in electronic devices and digital logic circuits.
  • Voltage Regulation: Can be utilized in voltage regulator circuits for stable power supply outputs.

Functionality

The MMBT3906-7-F PNP transistor is designed to amplify signals and control the flow of current in electronic circuits. It provides versatility in various applications requiring PNP transistor functionality.

Usage Guide

  • Connection: Connect the emitter terminal to ground, the base terminal to the input signal, and the collector terminal to the output/load.
  • Base Resistor: Include a suitable resistor in series with the base terminal to limit current flow and prevent damage to the transistor.
  • Load Connection: Connect the load or circuit requiring amplification or switching to the collector terminal of the transistor.

Frequently Asked Questions

Q: What is the maximum current rating of the MMBT3906-7-F transistor?
A: The MMBT3906-7-F transistor has a maximum current rating of 200mA.

Q: Is the MMBT3906-7-F suitable for high-power applications?
A: No, the MMBT3906-7-F is designed for low to medium power applications due to its current and voltage ratings.

Equivalent

For similar functionalities, consider these alternatives to the MMBT3906-7-F:

  • 2N3906: A commonly used PNP transistor with similar characteristics to the MMBT3906-7-F.
  • BC557: Another PNP transistor suitable for general amplification and switching applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category Bipolar Transistors - BJT RoHS Details
Mounting Style SMD/SMT Package / Case SOT-23-3
Transistor Polarity PNP Configuration Single
Collector- Emitter Voltage VCEO Max 40 V Collector- Base Voltage VCBO 40 V
Emitter- Base Voltage VEBO 6 V Collector-Emitter Saturation Voltage 400 mV
Maximum DC Collector Current 200 mA Pd - Power Dissipation 310 mW
Gain Bandwidth Product fT 250 MHz Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Series MMBT3906
Brand Diodes Incorporated Continuous Collector Current - 200 mA
DC Current Gain hFE Max 300 Height 1 mm
Length 3.05 mm Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 3000 Subcategory Transistors
Technology Si Width 1.4 mm
Unit Weight 0.000282 oz

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