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MMBT2222ALP4-7B

Bipolar Transistors - BJT General Purpose Tran X2-DFN1006-3 T&R 10

Inventory:5,334

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Overview of MMBT2222ALP4-7B

Featuring a transition frequency of 300MHz, the MMBT2222ALP4-7B offers reliable high-frequency performance for applications requiring fast switching speeds. With a DC current gain hFE minimum of 40hFE, this transistor ensures stable and consistent amplification of signals. However, it is important to note that this product is not RoHS compliant

Key Features

  • Low Collector-Emitter Saturation Voltage, VCE(sat)
  • Ultra-Small Leadless Surface Mount Package
  • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
  • Halogen and Antimony Free. “Green” Device (Note 3)
  • Qualified to AEC-Q101 Standards for High Reliability
Diodes Incorporated Inventory

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer Diodes Incorporated Product Category Transistors (BJT) - Single
Series MMBT2222 Packaging Alternate Packaging
Mounting-Style Surface Mount Package-Case 3-DFN1006 (1.0x0.6)
Mounting-Type Single Supplier-Device-Package 460mW
Configuration NPN Power-Max 600mA
Transistor-Type 1V @ 50mA, 500mA Electric current collectors 10nA (ICBO)
Voltage-Collector-Emitter-Breakdown-Max + 150 C DC-Current-Gain-hFE-Min-Ic-Vce NPN
Vce saturation 6 V Current-Collector-Cutoff-Max 600 mA

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