• MJD32C TO252 (DPAK)
MJD32C TO252 (DPAK)

MJD32C

Trans GP BJT PNP 100V 3A 1560mW 3-Pin(2+Tab) DPAK Tube

Quantity Unit Price(USD) Ext. Price
5 $0.238 $1.19
50 $0.198 $9.90
150 $0.181 $27.15
500 $0.160 $80.00
2500 $0.140 $350.00
5000 $0.134 $670.00

Inventory:7,414

*The price is for reference only.
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Overview of MJD32C

The MJD32C is a NPN Darlington transistor designed for high-voltage and high-current switching applications. This transistor features a high current gain and low saturation voltage, making it ideal for driving a variety of loads in industrial and automotive systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • E: Emitter
  • B: Base
  • C: Collector

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the MJD32C transistor for a visual representation.

Key Features

  • NPN Darlington Configuration: The MJD32C is configured as an NPN Darlington transistor, providing high current gain and low switching losses.
  • High Voltage and Current Capability: This transistor can handle high voltages and currents, suitable for demanding switching applications.
  • Low Saturation Voltage: The MJD32C exhibits low saturation voltage, reducing power dissipation during on-state operation.
  • Wide Operating Temperature Range: Operates reliably over a wide temperature range, making it suitable for harsh environments.

Note: For detailed technical specifications, please refer to the MJD32C datasheet.

Application

  • Industrial Automation: Ideal for driving high-current loads in industrial automation systems.
  • Automotive Electronics: Suitable for use in automotive applications such as motor control and lighting systems.
  • Power Supplies: Used in power supply circuits for efficient switching operations.

Functionality

The MJD32C NPN Darlington transistor is designed to provide high current gain and efficient switching performance. It serves as a reliable and robust component in various electronic systems.

Usage Guide

  • Mounting: Ensure proper heat sinking to maintain temperature within the specified limits.
  • Base Current: Apply sufficient base current to ensure the transistor operates in the saturation region for low power dissipation.
  • Load Connection: Connect the load between the collector and the power supply for effective switching.

Frequently Asked Questions

Q: Is the MJD32C suitable for high-frequency switching applications?
A: The MJD32C is primarily designed for high-voltage and high-current switching and may not be ideal for high-frequency applications.

Equivalent

For similar functionalities, consider these alternatives to the MJD32C:

  • MJD31C: A similar NPN Darlington transistor with slightly different voltage and current ratings.
  • BUX98A: This is a high-voltage NPN transistor with comparable characteristics to the MJD32C.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category Bipolar Transistors - BJT Mounting Style SMD/SMT
Package / Case TO-252-3 Transistor Polarity PNP
Configuration Single Collector- Emitter Voltage VCEO Max 100 V
Collector- Base Voltage VCBO 100 V Emitter- Base Voltage VEBO 5 V
Maximum DC Collector Current 3 A Pd - Power Dissipation 15 W
Minimum Operating Temperature - 65 C Maximum Operating Temperature + 150 C
Series 500V Transistors Brand STMicroelectronics
DC Collector/Base Gain hfe Min 20 Height 2.4 mm
Length 6.6 mm Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 3000 Subcategory Transistors
Technology Si Width 6.2 mm
Unit Weight 0.063493 oz

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