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JANTXV2N2222A

Trans GP BJT NPN 50V 0.8A 500mW 3-Pin TO-18 Tube

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Overview of JANTXV2N2222A

The JANTXV2N2222A is a high-reliability, military-grade NPN bipolar junction transistor (BJT) designed for use in critical applications where ruggedness and performance are required. It offers low noise, high gain, and excellent switching characteristics, making it suitable for a wide range of electronic circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Collector (C): Output terminal for amplified current.
  • Base (B): Control terminal for turning the transistor on or off.
  • Emitter (E): Ground/reference terminal.


Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the JANTXV2N2222A transistor for a visual representation.

Key Features

  • High Reliability: The JANTXV2N2222A is built to military standards for reliability in harsh environments.
  • Low Noise: This transistor offers low noise operation, making it suitable for sensitive signal amplification.
  • High Gain: The high gain of the JANTXV2N2222A allows for effective signal amplification in various circuit designs.
  • Fast Switching Speed: With its fast switching characteristics, this transistor can be used in applications requiring quick response times.
  • Wide Operating Temperature Range: The JANTXV2N2222A can operate over a wide temperature range, making it versatile for different temperature conditions.

Note: For detailed technical specifications, please refer to the JANTXV2N2222A datasheet.

Application

  • Signal Amplification: Ideal for amplifying signals in audio, RF, and other electronic circuits.
  • Switching Circuits: Used in various switching applications due to its fast switching speed.
  • Oscillator Circuits: Suitable for oscillator circuits requiring stable and reliable performance.

Functionality

The JANTXV2N2222A transistor is a versatile component that can amplify signals, switch circuits, and oscillate based on the specific circuit configuration. It is a dependable choice for demanding applications that require high reliability and performance.

Usage Guide

  • Collector Connection: Connect the load or output device to the collector (C) terminal.
  • Base Control: Apply a suitable signal or voltage to the base (B) terminal to control the transistor's conductivity.
  • Emitter Ground: Connect the emitter (E) terminal to the ground or reference point of the circuit.

Frequently Asked Questions

Q: Is the JANTXV2N2222A suitable for high-frequency applications?
A: Yes, the JANTXV2N2222A can be used in high-frequency circuits due to its fast switching speed and high gain characteristics.

Equivalent

For similar functionalities, consider these alternatives to the JANTXV2N2222A:

  • 2N3904: A general-purpose NPN transistor with similar amplification and switching capabilities.
  • BC548: This is a versatile NPN transistor commonly used in audio amplifier circuits and general switching applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category Bipolar Transistors - BJT RoHS Details
Mounting Style Through Hole Package / Case TO-18-3
Transistor Polarity NPN Configuration Single
Collector- Emitter Voltage VCEO Max 50 V Emitter- Base Voltage VEBO 6 V
Pd - Power Dissipation 500 mW Minimum Operating Temperature - 65 C
Maximum Operating Temperature + 200 C Brand onsemi
Continuous Collector Current 800 mA DC Collector/Base Gain hfe Min 75
Product Type BJTs - Bipolar Transistors Factory Pack Quantity 338
Subcategory Transistors Technology Si

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