JANTXV2N2222A
Trans GP BJT NPN 50V 0.8A 500mW 3-Pin TO-18 Tube
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Part Number : JANTXV2N2222A
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Package/Case : TO18-3
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Brand : MICROCHIP
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Components Classification : Single Bipolar Transistors
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Datesheet : JANTXV2N2222A DataSheet (PDF)
The JANTXV2N2222A is a high-reliability, military-grade NPN bipolar junction transistor (BJT) designed for use in critical applications where ruggedness and performance are required. It offers low noise, high gain, and excellent switching characteristics, making it suitable for a wide range of electronic circuits. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the JANTXV2N2222A transistor for a visual representation. Note: For detailed technical specifications, please refer to the JANTXV2N2222A datasheet. Functionality The JANTXV2N2222A transistor is a versatile component that can amplify signals, switch circuits, and oscillate based on the specific circuit configuration. It is a dependable choice for demanding applications that require high reliability and performance. Usage Guide Q: Is the JANTXV2N2222A suitable for high-frequency applications? For similar functionalities, consider these alternatives to the JANTXV2N2222A:Overview of JANTXV2N2222A
Pinout
Circuit DiagramKey Features
Application
Frequently Asked Questions
A: Yes, the JANTXV2N2222A can be used in high-frequency circuits due to its fast switching speed and high gain characteristics.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | Bipolar Transistors - BJT | RoHS | Details |
Mounting Style | Through Hole | Package / Case | TO-18-3 |
Transistor Polarity | NPN | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 50 V | Emitter- Base Voltage VEBO | 6 V |
Pd - Power Dissipation | 500 mW | Minimum Operating Temperature | - 65 C |
Maximum Operating Temperature | + 200 C | Brand | onsemi |
Continuous Collector Current | 800 mA | DC Collector/Base Gain hfe Min | 75 |
Product Type | BJTs - Bipolar Transistors | Factory Pack Quantity | 338 |
Subcategory | Transistors | Technology | Si |
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