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JANTX2N3439

Introducing the JANTX2N3439, a robust NPN bipolar transistor built to handle high voltages and power levels

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Overview of JANTX2N3439

The JANTX2N3439 is a high-power NPN bipolar junction transistor (BJT) designed for use in general-purpose amplification and switching applications. It features a rugged construction and high current and voltage ratings, making it suitable for demanding electronic circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • Emitter (E): Connected to the external circuit for current flow out of the transistor.
  • Base (B): Control terminal that regulates the transistor's conductivity when biased.
  • Collector (C): Current is drawn into the transistor from this terminal.

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the JANTX2N3439 transistor for a visual representation.

Key Features

  • High Power Capability: The JANTX2N3439 is capable of handling high power levels, suitable for power amplification applications.
  • High Current and Voltage Ratings: With its high current and voltage ratings, this transistor can operate in demanding circuit conditions.
  • Rugged Construction: The rugged design of the JANTX2N3439 ensures reliable performance in harsh environments.
  • Low Saturation Voltage: It exhibits low saturation voltage, minimizing power dissipation and improving efficiency.
  • Wide Temperature Range: The transistor can operate over a wide temperature range, making it suitable for varied environmental conditions.

Note: For detailed technical specifications, please refer to the JANTX2N3439 datasheet.

Application

  • Power Amplification: Ideal for power amplification in audio, RF, and other high-power electronic systems.
  • Switching Circuits: Suitable for use in switching applications where high current and voltage capabilities are required.
  • General-Purpose Amplification: The JANTX2N3439 can be used in various general-purpose amplification circuits.

Functionality

The JANTX2N3439 is a high-power NPN transistor that provides robust amplification and switching capabilities, making it a versatile component in electronic circuits.

Usage Guide

  • Biasing: Proper biasing of the base terminal is essential to control the transistor's conductivity and achieve the desired amplification or switching behavior.
  • Load Connection: Connect the load to the collector terminal for amplification or switching operations.
  • Emitter Connection: Connect the emitter terminal to the ground or external circuit for current flow out of the transistor.

Frequently Asked Questions

Q: Is the JANTX2N3439 suitable for high-frequency applications?
A: While the JANTX2N3439 can operate at moderate frequencies, it is primarily designed for high-power amplification and switching rather than high-frequency applications.

Equivalent

For similar functionalities, consider these alternatives to the JANTX2N3439:

  • 2N3055: This is a widely used high-power NPN transistor suitable for power amplification and switching applications.
  • MJ15025: A high-voltage, high-current NPN transistor designed for demanding power amplifier and switching circuitry.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category Bipolar Transistors - BJT RoHS N
Mounting Style Through Hole Package / Case TO-39-3
Transistor Polarity NPN Configuration Single
Collector- Emitter Voltage VCEO Max 350 V Collector- Base Voltage VCBO 450 V
Emitter- Base Voltage VEBO 7 V Collector-Emitter Saturation Voltage 500 mV
Maximum DC Collector Current 1 A Pd - Power Dissipation 800 mW
Minimum Operating Temperature - 65 C Maximum Operating Temperature + 200 C
Brand Microchip / Microsemi DC Collector/Base Gain hfe Min 40 at 20 mA, 10 V
DC Current Gain hFE Max 160 at 20 mA, 10 V Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 1 Subcategory Transistors
Technology Si Unit Weight 1.624366 oz

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