JANTX2N3439
Introducing the JANTX2N3439, a robust NPN bipolar transistor built to handle high voltages and power levels
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Part Number : JANTX2N3439
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Package/Case : TO39-3
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Brand : Microchip Technology
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Components Classification : Single Bipolar Transistors
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Datesheet : JANTX2N3439 DataSheet (PDF)
The JANTX2N3439 is a high-power NPN bipolar junction transistor (BJT) designed for use in general-purpose amplification and switching applications. It features a rugged construction and high current and voltage ratings, making it suitable for demanding electronic circuits. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the JANTX2N3439 transistor for a visual representation. Note: For detailed technical specifications, please refer to the JANTX2N3439 datasheet. Functionality The JANTX2N3439 is a high-power NPN transistor that provides robust amplification and switching capabilities, making it a versatile component in electronic circuits. Usage Guide Q: Is the JANTX2N3439 suitable for high-frequency applications? For similar functionalities, consider these alternatives to the JANTX2N3439:Overview of JANTX2N3439
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: While the JANTX2N3439 can operate at moderate frequencies, it is primarily designed for high-power amplification and switching rather than high-frequency applications.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | Bipolar Transistors - BJT | RoHS | N |
Mounting Style | Through Hole | Package / Case | TO-39-3 |
Transistor Polarity | NPN | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 350 V | Collector- Base Voltage VCBO | 450 V |
Emitter- Base Voltage VEBO | 7 V | Collector-Emitter Saturation Voltage | 500 mV |
Maximum DC Collector Current | 1 A | Pd - Power Dissipation | 800 mW |
Minimum Operating Temperature | - 65 C | Maximum Operating Temperature | + 200 C |
Brand | Microchip / Microsemi | DC Collector/Base Gain hfe Min | 40 at 20 mA, 10 V |
DC Current Gain hFE Max | 160 at 20 mA, 10 V | Product Type | BJTs - Bipolar Transistors |
Factory Pack Quantity | 1 | Subcategory | Transistors |
Technology | Si | Unit Weight | 1.624366 oz |
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