• IRLMS2002TRPBF TSOP-6
IRLMS2002TRPBF TSOP-6

IRLMS2002TRPBF

Silicon N-channel MOSFET designed for switching applications with a maximum voltage of 20V and current of 6

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Overview of IRLMS2002TRPBF

The IRLMS2002TRPBF is a MOSFET transistor designed for switching applications in power electronics circuits. It features a low on-resistance and high current-handling capability, making it suitable for various power management tasks.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the usage of the IRLMS2002TRPBF MOSFET in a typical switching application.

Key Features

  • Low On-Resistance: The IRLMS2002TRPBF offers a low on-resistance, minimizing power losses during switching operations.
  • High Current Capability: With its high current-handling capacity, this MOSFET is suitable for power applications requiring high current levels.
  • Fast Switching Speed: The IRLMS2002TRPBF provides fast switching speeds, allowing for efficient power management in dynamic systems.
  • Low Threshold Voltage: This MOSFET has a low threshold voltage, enabling it to be easily triggered by control signals.

Note: For detailed technical specifications, please refer to the IRLMS2002TRPBF datasheet.

Application

  • DC-DC Converters: Ideal for use in DC-DC converter circuits for efficient power conversion.
  • Motor Control: Suitable for motor control applications where high current switching is required.
  • LED Driver Circuits: Can be used in LED driver circuits for controlling the brightness of LEDs.

Functionality

The IRLMS2002TRPBF MOSFET is a high-performance transistor that facilitates efficient power switching and control in various electronic applications.

Usage Guide

  • Gate Drive: Apply a suitable gate-source voltage to turn the MOSFET on and off effectively.
  • Current Handling: Ensure that the drain current does not exceed the specified maximum limit to prevent thermal issues.
  • Heat Dissipation: Provide adequate heat sinking if operating at high currents to maintain optimal performance.

Frequently Asked Questions

Q: Is the IRLMS2002TRPBF suitable for high-frequency switching applications?
A: Yes, the IRLMS2002TRPBF has a fast switching speed, making it suitable for high-frequency switching tasks.

Equivalent

For similar functionalities, consider these alternatives to the IRLMS2002TRPBF:

  • IRFZ44N: A power MOSFET with comparable characteristics to the IRLMS2002TRPBF for power switching applications.
  • STP55NF06L: This MOSFET offers similar performance and features to the IRLMS2002TRPBF for power management tasks.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer Infineon Product Category MOSFET
RoHS Details Technology Si
Mounting Style SMD/SMT Package / Case TSOP-6
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 20 V Id - Continuous Drain Current 6.5 A
Rds On - Drain-Source Resistance 30 mOhms Vgs - Gate-Source Voltage - 12 V, + 12 V
Vgs th - Gate-Source Threshold Voltage 1.2 V Qg - Gate Charge 15 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 2 W Channel Mode Enhancement
Brand Infineon Technologies Configuration Single
Fall Time 16 ns Forward Transconductance - Min 13 S
Height 1.1 mm Length 3 mm
Product Type MOSFET Rise Time 11 ns
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 36 ns
Typical Turn-On Delay Time 8.5 ns Width 1.5 mm
Unit Weight 0.000705 oz

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