IRLMS2002TRPBF
Silicon N-channel MOSFET designed for switching applications with a maximum voltage of 20V and current of 6
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Part Number : IRLMS2002TRPBF
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Package/Case : TSOP-6
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Brands : INFINEON
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Components Categories : Single FETs, MOSFETs
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Datesheet : IRLMS2002TRPBF DataSheet (PDF)
The IRLMS2002TRPBF is a MOSFET transistor designed for switching applications in power electronics circuits. It features a low on-resistance and high current-handling capability, making it suitable for various power management tasks. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the usage of the IRLMS2002TRPBF MOSFET in a typical switching application. Note: For detailed technical specifications, please refer to the IRLMS2002TRPBF datasheet. Functionality The IRLMS2002TRPBF MOSFET is a high-performance transistor that facilitates efficient power switching and control in various electronic applications. Usage Guide Q: Is the IRLMS2002TRPBF suitable for high-frequency switching applications? For similar functionalities, consider these alternatives to the IRLMS2002TRPBF:Overview of IRLMS2002TRPBF
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the IRLMS2002TRPBF has a fast switching speed, making it suitable for high-frequency switching tasks.Equivalent
![](/files/uploads/product/b/87e3304515aa40519d25dbf84fbda17e.webp)
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Manufacturer | Infineon | Product Category | MOSFET |
RoHS | Details | Technology | Si |
Mounting Style | SMD/SMT | Package / Case | TSOP-6 |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 20 V | Id - Continuous Drain Current | 6.5 A |
Rds On - Drain-Source Resistance | 30 mOhms | Vgs - Gate-Source Voltage | - 12 V, + 12 V |
Vgs th - Gate-Source Threshold Voltage | 1.2 V | Qg - Gate Charge | 15 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 2 W | Channel Mode | Enhancement |
Brand | Infineon Technologies | Configuration | Single |
Fall Time | 16 ns | Forward Transconductance - Min | 13 S |
Height | 1.1 mm | Length | 3 mm |
Product Type | MOSFET | Rise Time | 11 ns |
Factory Pack Quantity | 3000 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Typical Turn-Off Delay Time | 36 ns |
Typical Turn-On Delay Time | 8.5 ns | Width | 1.5 mm |
Unit Weight | 0.000705 oz |
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