IRL640SPBF
IRL640SPBF, N-channel MOSFET Transistor, 17 A 200 V, 3-Pin D2PAK
Inventory:6,875
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Part Number : IRL640SPBF
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Package/Case : D2PAK-3
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Brand : Siliconix
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Components Classification : Single FETs, MOSFETs
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Datesheet : IRL640SPBF DataSheet (PDF)
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Series : SIHL640S
The IRL640SPBF is a power MOSFET transistor designed for use in high-power switching applications. It features a high current capability and low on-state resistance, making it suitable for power management and motor control applications. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the IRL640SPBF MOSFET for a visual representation. Note: For detailed technical specifications, please refer to the IRL640SPBF datasheet. Functionality The IRL640SPBF is a power MOSFET transistor that enables efficient and reliable power switching in various electronic systems, providing high current handling capabilities and low on-state resistance for improved performance. Usage Guide Q: Is the IRL640SPBF suitable for high-frequency applications? For similar functionalities, consider these alternatives to the IRL640SPBF:Overview of IRL640SPBF
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the fast switching speed of the IRL640SPBF makes it suitable for high-frequency switching circuits.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
REACH | Details | Technology | Si |
Mounting Style | SMD/SMT | Package / Case | D2PAK-3 (TO-263-3) |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 200 V | Id - Continuous Drain Current | 17 A |
Rds On - Drain-Source Resistance | 180 mOhms | Vgs - Gate-Source Voltage | - 10 V, + 10 V |
Vgs th - Gate-Source Threshold Voltage | 1 V | Qg - Gate Charge | 66 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 125 W | Channel Mode | Enhancement |
Brand | Vishay Semiconductors | Configuration | Single |
Product Type | MOSFET | Factory Pack Quantity | 1000 |
Subcategory | MOSFETs | Unit Weight | 0.139332 oz |
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