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IRL640SPBF

IRL640SPBF, N-channel MOSFET Transistor, 17 A 200 V, 3-Pin D2PAK

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Overview of IRL640SPBF

The IRL640SPBF is a power MOSFET transistor designed for use in high-power switching applications. It features a high current capability and low on-state resistance, making it suitable for power management and motor control applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • GATE: Gate terminal for controlling the MOSFET
  • DRAIN: Power output terminal
  • SOURCE: Ground terminal

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IRL640SPBF MOSFET for a visual representation.

Key Features

  • High Current Capability: The IRL640SPBF can handle high currents, making it suitable for power switching applications.
  • Low On-State Resistance: With low RDS(on) values, this MOSFET minimizes power loss and increases efficiency in circuit designs.
  • Fast Switching Speed: The IRL640SPBF offers fast switching times, allowing for rapid switching in high-frequency applications.
  • Robust Construction: Designed for reliable performance in demanding environments, ensuring long-term operation.
  • Overtemperature Protection: Includes built-in features to protect the MOSFET from overheating during operation.

Note: For detailed technical specifications, please refer to the IRL640SPBF datasheet.

Application

  • Power Management: Ideal for use in power supply units, voltage regulators, and other power management systems.
  • Motor Control: Suitable for motor drive applications, allowing for efficient control of motor speed and direction.
  • Switching Circuits: Used in high-power switching circuits for on/off control of electrical loads.

Functionality

The IRL640SPBF is a power MOSFET transistor that enables efficient and reliable power switching in various electronic systems, providing high current handling capabilities and low on-state resistance for improved performance.

Usage Guide

  • Gate Control: Apply appropriate voltage levels to the GATE pin to control the switching behavior of the MOSFET.
  • Power Connections: Connect the DRAIN pin to the load or power source, and the SOURCE pin to ground for proper functionality.
  • Heat Dissipation: Ensure proper heat sinking or thermal management to maintain optimal operating temperatures.

Frequently Asked Questions

Q: Is the IRL640SPBF suitable for high-frequency applications?
A: Yes, the fast switching speed of the IRL640SPBF makes it suitable for high-frequency switching circuits.

Equivalent

For similar functionalities, consider these alternatives to the IRL640SPBF:

  • IRF640SPBF: A similar power MOSFET transistor from Infineon Technologies with comparable specifications and performance.
  • STP80NF70FP: This MOSFET from STMicroelectronics offers similar high-current capabilities and low on-state resistance.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style SMD/SMT Package / Case D2PAK-3 (TO-263-3)
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 200 V Id - Continuous Drain Current 17 A
Rds On - Drain-Source Resistance 180 mOhms Vgs - Gate-Source Voltage - 10 V, + 10 V
Vgs th - Gate-Source Threshold Voltage 1 V Qg - Gate Charge 66 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 125 W Channel Mode Enhancement
Brand Vishay Semiconductors Configuration Single
Product Type MOSFET Factory Pack Quantity 1000
Subcategory MOSFETs Unit Weight 0.139332 oz

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