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IRG4PH40UDPBF

A discrete IGBT with anti-parallel diode is included in the IRG4PH40UDPBF product

Quantity Unit Price(USD) Ext. Price
1 $2.651 $2.65
200 $1.027 $205.40
500 $0.991 $495.50
1000 $0.972 $972.00

Inventory:4,610

*The price is for reference only.
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Overview of IRG4PH40UDPBF

IGBT 1200 V 41 A 160 W Through Hole TO-247AC

Key Features

  • UltraFast: Optimized for high operating
  • frequencies up to 40 kHz in hard switching,
  • >200 kHz in resonant mode
  • New IGBT design provides tighter
  • parameter distribution and higher efficiency than
  • previous generations
  • IGBT co-packaged with HEXFREDTM ultrafast,
  • ultra-soft-recovery anti-parallel diodes for use in
  • bridge configurations
  • Industry standard TO-247AC package
  • Lead-Free
  • Benefits
  • Higher switching frequency capability than
  • competitive IGBTs
  • Highest efficiency available
  • HEXFRED diodes optimized for performance with
  • IGBTs . Minimized recovery characteristics require
  • less/no snubbing

Application

POWER CONTROL

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid IRG4PH40UDPBF Rohs Code Yes
Part Life Cycle Code Obsolete Ihs Manufacturer INFINEON TECHNOLOGIES AG
Package Description FLANGE MOUNT, R-PSFM-T3 Reach Compliance Code compliant
ECCN Code EAR99 Date Of Intro 1998-01-01
Samacsys Manufacturer Infineon Additional Feature ULTRA FAST SOFT RECOVERY
Case Connection COLLECTOR Collector Current-Max (IC) 41 A
Collector-Emitter Voltage-Max 1200 V Configuration SINGLE WITH BUILT-IN DIODE
Fall Time-Max (tf) 360 ns Gate-Emitter Thr Voltage-Max 6 V
Gate-Emitter Voltage-Max 20 V JEDEC-95 Code TO-247AC
JESD-30 Code R-PSFM-T3 JESD-609 Code e3
Number of Elements 1 Number of Terminals 3
Operating Temperature-Max 150 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 65 W
Qualification Status Not Qualified Surface Mount NO
Terminal Finish MATTE TIN OVER NICKEL Terminal Form THROUGH-HOLE
Terminal Position SINGLE Transistor Application POWER CONTROL
Transistor Element Material SILICON Turn-off Time-Nom (toff) 750 ns
Turn-on Time-Nom (ton) 74 ns

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