IRFS4010-7PPBF
Advanced D2PAK package with high current handling capabilities
Inventory:6,556
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Part Number : IRFS4010-7PPBF
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Package/Case : TO-263-7
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Brand : Infineon
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Components Classification : Single FETs, MOSFETs
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Datesheet : IRFS4010-7PPBF DataSheet (PDF)
The IRFS4010-7PPBF is a power MOSFET designed for high-efficiency, low-voltage. It is commonly used in power supplies, motor control, and other high-current switching applications due to its performance characteristics.Overview of IRFS4010-7PPBF
Pinout
p>(Note: The pin configuration below is a general representation. Refer to the specific datasheet precise details.)
- GATE: Gate terminal for controlling the MOSF
- DRAIN: High-side power supply connection
- SOURCE: Low-side ground connection >
Circuit Diagram
Incorporate a circuit diagram that illustrates the connections and operation of the IRFS4010-7PPBF MOSFET for a more visual representation.
Key Features:
- Low On-State Resistance (RDS(on)): The IRFS4010-7PPBF offers low RDS(on) values, resulting in reduced conduction losses and improved efficiency in high-current applications.
- High Current Capability: With its robust design, this MOSFET can handle high continuous currents, making it suitable for power electronics and motor control systems. li >
- Fast Switching Speeds:The MOSFET features fast switching times, enabling rapid control of high-power circuits without significant delays.
- Enhanced Thermal Performance:The packaging of the IRFS4010-7PPBF allows efficient heat dissipation, ensuring reliable operation under high load conditions. section
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | TO-263-7 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 100 V |
Id - Continuous Drain Current | 190 A | Rds On - Drain-Source Resistance | 3.3 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Qg - Gate Charge | 150 nC |
Pd - Power Dissipation | 380 W | Brand | Infineon Technologies |
Configuration | Single | Height | 4.4 mm |
Length | 10 mm | Product Type | MOSFET |
Factory Pack Quantity | 50 | Subcategory | MOSFETs |
Transistor Type | 1 N-Channel | Width | 9.25 mm |
Part # Aliases | SP001552284 | Unit Weight | 0.056438 oz |
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Warranty, Returns, and Additional Information
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