IRFR220TRPBF
Vishay IRFR220TRPBF N-channel MOSFET Transistor, 4.8 A, 200 V, 3-Pin TO-252
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $0.532 | $0.53 |
10 | $0.434 | $4.34 |
30 | $0.385 | $11.55 |
100 | $0.335 | $33.50 |
500 | $0.306 | $153.00 |
1000 | $0.293 | $293.00 |
Inventory:7,331
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Part Number : IRFR220TRPBF
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Package/Case : DPAK-3
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Brand : VISHAY
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Components Classification : Single FETs, MOSFETs
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Datesheet : IRFR220TRPBF DataSheet (PDF)
The IRFR220TRPBF is a Power MOSFET transistor designed for use in high-power switching applications.This MOSFET features a low on-state resistance and high switching speed,making it ideal for power management and control in various electronic circuits. (Note:The pin configuration below is a general representation.Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the IRFR220TRPBF MOSFET for a visual representation. Note:For detailed technical specifications,please refer to the IRFR220TRPBF datasheet. Functionality The IRFR220TRPBF Power MOSFET transistor enables efficient power switching in various electronic applications,providing high performance and reliability. Usage Guide Q:Does the IRFR220TRPBF require external protection circuitry? For similar functionalities,consider these alternatives to the IRFR220TRPBF:Overview of IRFR220TRPBF
Pinout
Circuit DiagramKey Features
Application
Frequently Asked Questions
A:External protection circuitry such as flyback diodes may be required when using the IRFR220TRPBF in high-power switching applications to protect against voltage spikes.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
REACH | Details | Technology | Si |
Mounting Style | SMD/SMT | Package / Case | DPAK-3 (TO-252-3) |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 200 V | Id - Continuous Drain Current | 4.8 A |
Rds On - Drain-Source Resistance | 800 mOhms | Vgs - Gate-Source Voltage | - 20 V, + 20 V |
Vgs th - Gate-Source Threshold Voltage | 2 V | Qg - Gate Charge | 14 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 42 W | Channel Mode | Enhancement |
Series | IRFR/U | Brand | Vishay Semiconductors |
Configuration | Single | Fall Time | 13 ns |
Forward Transconductance - Min | 1.7 S | Height | 2.38 mm |
Length | 6.73 mm | Product Type | MOSFET |
Rise Time | 22 ns | Factory Pack Quantity | 2000 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 19 ns | Typical Turn-On Delay Time | 7.2 ns |
Width | 6.22 mm | Unit Weight | 0.011640 oz |
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