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IRFPC60LCPBF

IRFPC60LCPBF - Infineon N-Channel Power MOSFET

Quantity Unit Price(USD) Ext. Price
1 $4.109 $4.11
10 $3.910 $39.10
25 $3.794 $94.85
100 $3.674 $367.40
500 $3.164 $1,582.00
1000 $3.140 $3,140.00

Inventory:7,107

*The price is for reference only.
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Overview of IRFPC60LCPBF

The IRFPC60LCPBF is a power MOSFET transistor designed for high-performance power electronic applications. It features low on-state resistance and a fast switching capability, making it suitable for power management and conversion systems.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • NC: No Connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IRFPC60LCPBF MOSFET for a visual representation.

Key Features

  • Low On-State Resistance: The IRFPC60LCPBF offers low on-state resistance for minimal power dissipation.
  • High Switching Speed: This MOSFET has a fast switching capability, enabling efficient power control.
  • High Voltage Rating: With a high drain-source voltage rating, it is suitable for high-voltage applications.
  • High Current Capability: Capable of handling high continuous and pulsed currents for power applications.
  • Enhanced Thermal Performance: Designed for enhanced thermal conductivity and heat dissipation.

Note: For detailed technical specifications, please refer to the IRFPC60LCPBF datasheet.

Application

  • Power Management Systems: Ideal for use in power supplies, voltage regulators, and motor control circuits.
  • Switching Power Converters: Suitable for high-frequency switching converters and inverters.
  • Motor Drive Circuits: Used in motor drive and control circuits for industrial and automotive applications.

Functionality

The IRFPC60LCPBF power MOSFET provides efficient and reliable switching for power electronic applications, offering high current and voltage handling capabilities.

Usage Guide

  • Gate Control: Apply the appropriate voltage levels to the gate terminal to control the MOSFET's conductivity.
  • Load Connection: Connect the load between the drain and source terminals for power switching.
  • Heat Management: Ensure proper heat sinking and thermal management for optimal performance and reliability.

Frequently Asked Questions

Q: Can the IRFPC60LCPBF be used for high-frequency applications?
A: Yes, the fast switching speed of the IRFPC60LCPBF makes it suitable for high-frequency power control applications.

Equivalent

For similar functionalities, consider these alternatives to the IRFPC60LCPBF:

  • IRF540PBF: A power MOSFET with comparable performance characteristics suitable for power electronics applications.
  • IRFZ44NPBF: This MOSFET offers similar high-speed switching and low on-state resistance for power management systems.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
REACH Details Technology Si
Mounting Style Through Hole Package / Case TO-247-3
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 600 V Id - Continuous Drain Current 16 A
Rds On - Drain-Source Resistance 400 mOhms Vgs - Gate-Source Voltage - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage 2 V Qg - Gate Charge 120 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 150 C
Pd - Power Dissipation 280 W Channel Mode Enhancement
Series IRFPC Brand Vishay Semiconductors
Configuration Single Height 20.82 mm
Length 15.87 mm Product Type MOSFET
Factory Pack Quantity 500 Subcategory MOSFETs
Width 5.31 mm Unit Weight 0.211644 oz

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