IRFPC60LCPBF
IRFPC60LCPBF - Infineon N-Channel Power MOSFET
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $4.109 | $4.11 |
10 | $3.910 | $39.10 |
25 | $3.794 | $94.85 |
100 | $3.674 | $367.40 |
500 | $3.164 | $1,582.00 |
1000 | $3.140 | $3,140.00 |
Inventory:7,107
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Part Number : IRFPC60LCPBF
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Package/Case : TO-247-3
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Brands : Vishay
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Components Categories : Single FETs, MOSFETs
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Datesheet : IRFPC60LCPBF DataSheet (PDF)
The IRFPC60LCPBF is a power MOSFET transistor designed for high-performance power electronic applications. It features low on-state resistance and a fast switching capability, making it suitable for power management and conversion systems. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the IRFPC60LCPBF MOSFET for a visual representation. Note: For detailed technical specifications, please refer to the IRFPC60LCPBF datasheet. Functionality The IRFPC60LCPBF power MOSFET provides efficient and reliable switching for power electronic applications, offering high current and voltage handling capabilities. Usage Guide Q: Can the IRFPC60LCPBF be used for high-frequency applications? For similar functionalities, consider these alternatives to the IRFPC60LCPBF:Overview of IRFPC60LCPBF
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: Yes, the fast switching speed of the IRFPC60LCPBF makes it suitable for high-frequency power control applications.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
REACH | Details | Technology | Si |
Mounting Style | Through Hole | Package / Case | TO-247-3 |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 600 V | Id - Continuous Drain Current | 16 A |
Rds On - Drain-Source Resistance | 400 mOhms | Vgs - Gate-Source Voltage | - 30 V, + 30 V |
Vgs th - Gate-Source Threshold Voltage | 2 V | Qg - Gate Charge | 120 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 280 W | Channel Mode | Enhancement |
Series | IRFPC | Brand | Vishay Semiconductors |
Configuration | Single | Height | 20.82 mm |
Length | 15.87 mm | Product Type | MOSFET |
Factory Pack Quantity | 500 | Subcategory | MOSFETs |
Width | 5.31 mm | Unit Weight | 0.211644 oz |
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