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IRFP054NPBF

MOSFET N-Channel 55V 81A TO247AC International Rectifier IRFP054NPBF N-channel MOSFET Transistor, 81 A, 55 V, 3-Pin TO-247AC

Quantity Unit Price(USD) Ext. Price
1 $1.488 $1.49
10 $1.268 $12.68
25 $1.147 $28.68
100 $1.010 $101.00
400 $0.950 $380.00
800 $0.923 $738.40

Inventory:8,096

*The price is for reference only.
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Overview of IRFP054NPBF

The IRFP054NPBF is a N-channel power MOSFET designed for high power applications. It features a low on-state resistance, making it ideal for power switching and amplification tasks.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IRFP054NPBF MOSFET for a visual representation.

Key Features

  • High Power Handling: The IRFP054NPBF is capable of handling high power levels, suitable for power applications.
  • Low On-State Resistance: With a low RDS(on) value, this MOSFET minimizes power losses and improves efficiency.
  • Fast Switching Speed: The IRFP054NPBF offers fast switching characteristics, enabling rapid power control.
  • Enhanced Thermal Performance: Designed for improved thermal dissipation to handle high power levels effectively.

Note: For detailed technical specifications, please refer to the IRFP054NPBF datasheet.

Application

  • Power Supplies: Ideal for use in power supply circuits for efficient power switching.
  • Motor Control: Suitable for motor control applications requiring high power handling capabilities.
  • Audio Amplifiers: Used in audio amplifier circuits for power amplification tasks.

Functionality

The IRFP054NPBF N-channel power MOSFET is designed to effectively switch high power levels with low losses, making it a reliable choice for various high-power applications.

Usage Guide

  • Gate Control: Apply appropriate voltage levels to the Gate (G) to control the switching of the MOSFET.
  • Power Connections: Connect the Drain (D) and Source (S) pins to the respective power supply and load connections.
  • Heat Dissipation: Ensure proper heat sinking to maintain efficient thermal performance during high-power operation.

Frequently Asked Questions

Equivalent

For similar functionalities, consider these alternatives to the IRFP054NPBF:

  • IRF540NPBF: Another N-channel power MOSFET with a comparable power handling capacity.
  • FQP30N06L: This MOSFET offers similar characteristics and performance to the IRFP054NPBF for power applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series HEXFET® Package Tube
Product Status Not For New Designs FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55 V
Current - Continuous Drain (Id) @ 25°C 81A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 12mOhm @ 43A, 10V Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 2900 pF @ 25 V Power Dissipation (Max) 170W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Through Hole
Supplier Device Package TO-247AC Package / Case TO-247-3
Base Product Number IRFP054

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