IRF7854PBF
Transistor N-channel MOSFET with 80V voltage rating and 10A current capacity, packaged in 8-pin SOIC tube
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Part Number : IRF7854PBF
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Package/Case : SOIC-8
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Brands : Infineon Technologies
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Components Categories : Single FETs, MOSFETs
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Datesheet : IRF7854PBF DataSheet (PDF)
The IRF7854PBF is a power MOSFET featuring a 30V Vds (drain-to-source voltage) and 6.6A continuous drain current. It is designed for use in power management and switching applications, offering high efficiency and reliability. (Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.) Include a circuit diagram illustrating the connections and operation of the IRF7854PBF MOSFET for a visual representation. Note: For detailed technical specifications, please refer to the IRF7854PBF datasheet. Functionality The IRF7854PBF is a power MOSFET designed to control the flow of current in power management and switching applications. It offers high voltage and current capabilities with low on-resistance for optimized power handling. Usage Guide Q: What is the maximum voltage rating for the IRF7854PBF? Q: Can the IRF7854PBF be used for high-current applications? For similar functionalities, consider these alternatives to the IRF7854PBF:Overview of IRF7854PBF
Pinout
Circuit Diagram
Key Features
Application
Frequently Asked Questions
A: The IRF7854PBF has a maximum drain-to-source voltage rating of 30V.
A: Yes, the IRF7854PBF is capable of handling continuous drain currents up to 6.6A, making it suitable for high-power applications.Equivalent
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Product Category | MOSFET | RoHS | Details |
Technology | Si | Mounting Style | SMD/SMT |
Package / Case | SOIC-8 | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 80 V |
Id - Continuous Drain Current | 10 A | Rds On - Drain-Source Resistance | 13.4 mOhms |
Vgs - Gate-Source Voltage | - 20 V, + 20 V | Qg - Gate Charge | 27 nC |
Minimum Operating Temperature | - 55 C | Maximum Operating Temperature | + 150 C |
Pd - Power Dissipation | 2.5 W | Channel Mode | Enhancement |
Brand | Infineon Technologies | Configuration | Single |
Fall Time | 8.6 ns | Height | 1.75 mm |
Length | 4.9 mm | Product Type | MOSFET |
Rise Time | 8.5 ns | Factory Pack Quantity | 95 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Type | HEXFET Power MOSFET | Typical Turn-Off Delay Time | 15 ns |
Typical Turn-On Delay Time | 9.4 ns | Width | 3.9 mm |
Part # Aliases | SP001551588 | Unit Weight | 0.019048 oz |
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