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IRF5851TRPBF

IRF5851TRPBF product ID

Inventory:5,836

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Overview of IRF5851TRPBF

The IRF5851TRPBF is a power MOSFET that is designed for high-speed switching applications. It features a low on-resistance and a rugged construction, making it ideal for various power management and industrial applications.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate terminal
  • D: Drain terminal
  • S: Source terminal
  • NC: No connection

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IRF5851TRPBF MOSFET for a visual representation.

Key Features

  • High-Speed Switching: The IRF5851TRPBF is designed for high-speed switching applications, providing fast response times in power management systems.
  • Low On-Resistance: This power MOSFET has a low on-resistance, reducing power losses and improving efficiency in power conversion circuits.
  • Rugged Construction: The IRF5851TRPBF is built to withstand high voltage and current levels, ensuring reliable operation in demanding industrial environments.
  • Wide Operating Temperature Range: With a wide operating temperature range, this MOSFET can be used in various temperature conditions.

Note: For detailed technical specifications, please refer to the IRF5851TRPBF datasheet.

Application

  • Power Management Systems: The IRF5851TRPBF is suitable for use in power management systems, such as DC-DC converters and motor drive circuits.
  • Industrial Automation: This power MOSFET can be used in industrial automation applications, such as motor control and power switching circuits.
  • Renewable Energy Systems: The IRF5851TRPBF is ideal for use in renewable energy systems, including solar inverters and wind power converters.

Functionality

The IRF5851TRPBF is a power MOSFET that enables high-speed switching in various power management and industrial applications. It offers low on-resistance and a rugged construction for reliable and efficient operation.

Usage Guide

  • Gate Voltage: Apply the appropriate gate voltage to control the switching behavior of the MOSFET.
  • Drain-Source Voltage: Connect the load between the drain and source terminals to control the power flow in the circuit.

Frequently Asked Questions

Q: Can the IRF5851TRPBF handle high currents?
A: Yes, the IRF5851TRPBF is designed to handle high currents, making it suitable for power management applications.

Equivalent

For similar functionalities, consider these alternatives to the IRF5851TRPBF:

  • IRFZ44NPBF: This is a power MOSFET with similar characteristics to the IRF5851TRPBF, offering a low on-resistance and high-speed switching capability.
  • IRF3710SPBF: This power MOSFET is designed for high-power applications with a low on-resistance and rugged construction.
  • IRF1010ESTRPBF: This power MOSFET offers a low on-resistance and is suitable for high-current applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Product Category MOSFET RoHS Details
Technology Si Mounting Style SMD/SMT
Package / Case TSOP-6 Transistor Polarity N-Channel, P-Channel
Number of Channels 2 Channel Vds - Drain-Source Breakdown Voltage 20 V
Id - Continuous Drain Current 2.7 A Rds On - Drain-Source Resistance 90 mOhms
Vgs - Gate-Source Voltage - 12 V, + 12 V Qg - Gate Charge 4 nC
Pd - Power Dissipation 960 mW Brand Infineon Technologies
Configuration Dual Height 1.1 mm
Length 3 mm Moisture Sensitive Yes
Product MOSFET Small Signal Product Type MOSFET
Factory Pack Quantity 3000 Subcategory MOSFETs
Transistor Type 1 N-Channel, 1 P-Channel Width 1.5 mm
Part # Aliases SP001561866 Unit Weight 0.000705 oz

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