• packageimg
packageimg

IRF5802TRPBF

TSOP-6 packaged N-channel MOSFETs capable of 150V and 900mA with RoHS compliance

Quantity Unit Price(USD) Ext. Price
1 $0.276 $0.28
10 $0.217 $2.17
30 $0.191 $5.73
100 $0.159 $15.90
600 $0.146 $87.60
1200 $0.137 $164.40

Inventory:6,536

*The price is for reference only.
  • 90-day after-sales guarantee
  • 365 Days Quality Guarantee
  • Genuine Product Guarantee
  • 7*24 hours service quarantee

Rapid Quote

Submit your quote request for IRF5802TRPBF using this form.You can also reach us via email at Email: [email protected], and we will respond within 12 hours.

Overview of IRF5802TRPBF

The IRF5802TRPBF is a MOSFET transistor that offers high efficiency and power density in a compact package. It is designed for use in high-frequency switching applications where low conduction losses are crucial.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source
  • VCC: Power Supply Voltage
  • GND: Ground

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IRF5802TRPBF MOSFET for a visual representation.

Key Features

  • High Efficiency: The IRF5802TRPBF offers high efficiency in switching applications, reducing power losses.
  • Low Conduction Losses: Designed to minimize conduction losses for improved performance.
  • Compact Package: Comes in a compact package for space-saving designs.
  • High Power Density: Provides high power density for demanding applications.
  • Low Gate Charge: Features low gate charge for efficient switching.

Note: For detailed technical specifications, please refer to the IRF5802TRPBF datasheet.

Application

  • High-Frequency Switching: Ideal for high-frequency switching applications where efficiency is critical.
  • Power Inverters: Suitable for use in power inverters and converters for efficient power management.
  • Motor Control: Used in motor control circuits for precise and efficient control of motors.

Functionality

The IRF5802TRPBF MOSFET transistor is designed to provide high efficiency and low conduction losses in high-frequency switching applications. It ensures reliable performance and effective power management in various electronic circuits.

Usage Guide

  • Gate Connection: Connect the Gate pin to the gate driver for controlling the transistor.
  • Power Connections: Connect the Drain pin to the load and the Source pin to the ground.
  • Power Supply: Apply the power supply voltage (VCC) to the appropriate pin for proper operation.

Frequently Asked Questions

Q: What is the maximum power density of the IRF5802TRPBF?
A: The IRF5802TRPBF offers a high power density suitable for demanding applications requiring efficient power management.

Q: Is the IRF5802TRPBF suitable for high-speed switching applications?
A: Yes, the IRF5802TRPBF is designed for high-frequency switching applications with low conduction losses for enhanced efficiency.

Equivalent

For similar functionalities, consider these alternatives to the IRF5802TRPBF:

  • IRF4905PBF: Another MOSFET transistor offering high efficiency and power density for switching applications.
  • IRF540NPBF: This MOSFET transistor provides reliable performance in power electronics applications with low conduction losses.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

functionalPacking TAPE & REEL addProductInfo Planar Mosfet - TSOP-6
packageNameMarketing TSOP-6 msl 1
halogenFree yes customerInfo STANDARD
fgr ZL5 productClassification COM
productStatusInfo active hfgr B
packageName TSOP6L pbFree yes
moistureProtPack NON DRY orderingCode SP001561828
fourBlockPackageName PG-TSOP-6-903 rohsCompliant yes
opn IRF5802TRPBF completelyPbFree no
sapMatnrSali SP001561828

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

  • Shipping and Package

    Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.

    Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.

  • Payment

    For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.

    If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.

PMGD175XNEX

PMGD175XNEX

High-Voltage Dual N-Channel Trench Mosfet
NDT455N

NDT455N

N-Channel MOSFET with SOT-223 Package
TGF3020-SM

TGF3020-SM

These RF MOSFET Transistors, operating in the 4-6 GHz range, provide a power output of 5W at 32 volts and exhibit a power gain of 38
NTE283

NTE283

Robust TO-package withstands harsh environments reliabl
DTC113ZKAT146

DTC113ZKAT146

Digital NPN transistor with a maximum voltage rating of 50V and current rating of 100mA in SOT346 package
MMBT3906,215

MMBT3906,215

PNP switching transistor in a compact SOT23 (SC-70) Surface-Mounted Device (SMD) plastic package
SI7913DN-T1-GE3

SI7913DN-T1-GE3

ROHS compliant for environmental responsibility
CM150DY-24T

CM150DY-24T

Power semiconductor
SI4401BDY-T1-E3

SI4401BDY-T1-E3

Unipolar Transistor
VQ1001J

VQ1001J

VQ1001J MOSFET QD 30V 0.83A