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IRF5801

N-Channel Silicon MOSFET with 0.6A Drain Current, 200V Voltage Rating, and 2.2ohm On-Resistance in a TSOP-6 Package

Inventory:7,907

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  • 365 Days Quality Guarantee
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Overview of IRF5801

Furthermore, the IRF5801 offers built-in protection features like over-current and over-temperature protection, ensuring safe operation and peace of mind when dealing with high-power applications. With its robust design and impressive specifications, the IRF5801 is a reliable choice for anyone looking for a power MOSFET transistor that can deliver exceptional performance in a wide range of settings

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Moisture Sensitivity Level 1 Polarity N
Tj max 150.0 °C Mounting SMD
Ptot max 2.0 W RthJA max 62.5 K/W
VDS max 200.0 V VGS max 30.0 V
Package TSOP-6 RDS (on) max 2200.0 mΩ
VGS(th) max 5.5 V VGS(th) min 3.0 V
ID max 0.6 A Special Features Small Power
Operating Temperature max 150.0 °C Operating Temperature min -55.0 °C

Warranty & Returns

Warranty, Returns, and Additional Information

  • QA & Return Policy

    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

    Returns for Exchange: within 90 days

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