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IRF2807ZS

N-Channel Power Field-Effect Transistor with 75A I(D)

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Overview of IRF2807ZS

The IRF2807ZS is a power MOSFET transistor designed for high-power switching applications. It features a low on-resistance and high drain current capability, making it suitable for use in power supplies, motor control, and other high-power circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IRF2807ZS MOSFET for a visual representation.

Key Features

  • High Power Handling: The IRF2807ZS can handle high power levels, making it suitable for demanding applications.
  • Low On-Resistance: With a low on-resistance, this MOSFET minimizes power loss and heat generation.
  • Fast Switching Speed: The IRF2807ZS offers fast switching speeds for efficient operation in switching circuits.
  • Overcurrent Protection: Designed to withstand overcurrent conditions, ensuring reliable performance in various scenarios.
  • Wide Operating Voltage Range: Operates at a wide voltage range, providing flexibility in different circuit configurations.

Note: For detailed technical specifications, please refer to the IRF2807ZS datasheet.

Application

  • Power Supplies: Ideal for use in power supply units for efficient power regulation.
  • Motor Control: Suitable for motor control applications due to its high current capability and fast switching.
  • Inverters: Used in inverter circuits for converting DC power to AC power in applications like solar inverters and UPS systems.

Functionality

The IRF2807ZS MOSFET is designed to handle high-power switching tasks with efficiency and reliability. It enables precise control over power flow in various electronic systems.

Usage Guide

  • Gate Control: Apply the appropriate voltage to the gate terminal to control the switching action of the MOSFET.
  • Drain-Source Connection: Connect the load or circuit between the drain and source terminals.
  • Heat Sink: Consider using a heat sink for applications with high power dissipation to maintain optimal operating temperature.

Frequently Asked Questions

Q: Can the IRF2807ZS be used in high-frequency switching applications?
A: While the IRF2807ZS offers fast switching speeds, for very high-frequency applications, specific considerations may be required based on the application requirements.

Equivalent

For similar functionalities, consider these alternatives to the IRF2807ZS:

  • IRF3205: This power MOSFET offers comparable power handling capabilities and can be a substitute for the IRF2807ZS in certain applications.
  • IRFB4110: Another high-power MOSFET option with similar characteristics suitable for power electronics applications.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Series HEXFET® Package Tube
Product Status Obsolete FET Type N-Channel
Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 75 V
Current - Continuous Drain (Id) @ 25°C 75A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 9.4mOhm @ 53A, 10V Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 3270 pF @ 25 V Power Dissipation (Max) 170W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) Mounting Type Surface Mount
Supplier Device Package D2PAK Package / Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

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