IPLK70R750P7ATMA1
Robust design and high-voltage handling make this device ideal for harsh environment
Quantity | Unit Price(USD) | Ext. Price |
---|---|---|
1 | $0.858 | $0.86 |
200 | $0.332 | $66.40 |
500 | $0.321 | $160.50 |
1000 | $0.315 | $315.00 |
Inventory:8,145
- 90-day after-sales guarantee
- 365 Days Quality Guarantee
- Genuine Product Guarantee
- 7*24 hours service quarantee
-
Part Number : IPLK70R750P7ATMA1
-
Package/Case : PG-TDSON-8
-
Brand : INFINEON
-
Components Classification : Single FETs, MOSFETs
-
Datesheet : IPLK70R750P7ATMA1 DataSheet (PDF)
-
Series : IPLK70R750P7
Overview of IPLK70R750P7ATMA1
N-Channel 700 V Surface Mount PG-TDSON-8
Specifications
The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.
Manufacturer | Infineon | Product Category | MOSFET |
RoHS | Details | Technology | Si |
Mounting Style | SMD/SMT | Package / Case | TDFN-8 |
Transistor Polarity | N-Channel | Number of Channels | 1 Channel |
Vds - Drain-Source Breakdown Voltage | 700 V | Channel Mode | Enhancement |
Brand | Infineon Technologies | Product Type | MOSFET |
Factory Pack Quantity | 5000 | Subcategory | MOSFETs |
Part # Aliases | IPLK70R750P7 SP001821744 |
Warranty & Returns
Warranty, Returns, and Additional Information
-
QA & Return Policy
Parts Quality Guarantee: 365 days
Returns for refund: within 90 days
Returns for Exchange: within 90 days
-
Shipping and Package
Shipping:For example, FedEx, JP, UPS, DHL,SAGAWA, or YTC.
Parts Packaging Guarantee: Featuring 100% ESD anti-static protection, our packaging incorporates high toughness and superior buffering capabilities.
-
Payment
For example, channels like VISA,MasterCard,Western Union,PayPal,MoneyGram,Rakuten Pay and more.
If you have specific payment channel preferences or requirements, please get in touch with our sales team for assistance.
IPB033N10N5LFATMA1
Differentiated MOSFET Options
IPB048N15N5LFATMA1
Product Code: IPB048N15N5LFATMA1
IPB010N06NATMA1
D2PAK-6 packaged N-channel MOSFET capable of handling up to 60 volts and 180 amps
IPB015N08N5ATMA1
N-channel 80V 180A Power MOSFET in TO-263 Package on Tape and Reel
IPB017N10N5LFATMA1
100V 180A 313W N-Channel TO263-7 Surface Mount MOSFET IPB017 Series
IPD50R500CE
IPD50R500CE Transistor N-Channel MOSFET
IPD60R180P7ATMA1
MOSFET IPD60R180P7ATMA1 by Infineon
IPB80N06S2L-07
Infineon IPB80N06S2L-07 N-channel MOSFET Transistor, 80 A, 55 V, 3+Tab-Pin TO-263
IPD90P03P4L-04
Lead-Free P Channel Power MOSFET
IPA60R160C6
N-Channel Power MOSFET
IRLR2705TRPBF
N-type Silicon Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) suitable for use as a switch or amplifier in electronic circuits
R6015ANX
3-Pin (3+Tab) N-channel Transistor rated for 600V and 15A
IRG4PH40K
Transistor IGBT Chip N-Channel 1200V 30A 160W TO-247AC Tube
Z0107MN 5AA4
00V 1A Surface Mount SOT-223 TRIAC Logic - Sensitive Gate
NDC651N
With its 6-pin SuperSOT configuration, NDC651N presents a reliable solution for N-channel MOSFET requirements, supporting currents up to 3
BSS316N H6327
MOSFET N-Ch 30V 1.4A SOT-23-3
IRFS3107PBF
N-Channel MOSFET IRFS3107PBF from INFINEON, featuring 75V voltage capacity and D2PAK enclosure
IRFS614B
The IRFS614B is packaged in TO-220F and complies with ROHS regulations
2SA2060(TE12L,F)
The 2SA2060(TE12L,F) power transistor operates at a frequency of 1MHz and has a power dissipation of 2.5W, with a minimum order quantity of 1000
SI3443CDV-T1-GE3
Small Signal Si Transistor, 20 V, 5970 mA"