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IPG20N10S4L22AATMA1

Transistor MOSFET N-channel rated for automotive use

Inventory:5,140

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Overview of IPG20N10S4L22AATMA1

The IPG20N10S4L22AATMA1 is a power MOSFET transistor designed for high-current switching applications. It features a low on-state resistance and high current capability, making it suitable for power management in various electronic circuits.

Pinout

(Note: The pin configuration below is a general representation. Refer to the specific datasheet for precise details.)

  • G: Gate
  • D: Drain
  • S: Source

Circuit Diagram

Include a circuit diagram illustrating the connections and operation of the IPG20N10S4L22AATMA1 MOSFET for a visual representation.

Key Features

  • Low On-State Resistance: Minimizes power loss and heat generation during switching operations.
  • High Current Capability: Able to handle high currents for efficient power management.
  • Fast Switching Speed: Enables rapid switching transitions for improved performance.
  • Low Gate Threshold Voltage: Allows for easy gate control and enhances compatibility with driving circuits.
  • Enhanced Power Dissipation: Designed for effective heat dissipation in high-power applications.

Note: For detailed technical specifications, please refer to the IPG20N10S4L22AATMA1 datasheet.

Application

  • Switching Power Supplies: Ideal for use in switching power supply circuits due to high current handling capabilities.
  • Motor Control: Suitable for motor control applications requiring efficient power switching.
  • LED Drivers: Can be used in LED driver circuits for controlling and regulating LED illumination.

Functionality

The IPG20N10S4L22AATMA1 MOSFET transistor provides efficient power management solutions with its low on-state resistance and high current capacity. It is designed to enhance overall system performance in various electronic applications.

Usage Guide

  • Drain-Source Voltage: Connect the drain (D) and source (S) pins as per the circuit requirements.
  • Gate Control: Apply the appropriate gate (G) voltage to control the switching operation of the MOSFET.
  • Heat Dissipation: Ensure proper heat sinking or cooling mechanisms for optimal performance in high-power applications.

Frequently Asked Questions

Q: Is the IPG20N10S4L22AATMA1 suitable for high-frequency switching applications?
A: Yes, the IPG20N10S4L22AATMA1 offers fast switching speed, making it suitable for high-frequency switching requirements.

Equivalent

For similar functionalities, consider these alternatives to the IPG20N10S4L22AATMA1:

  • IRF3205: This power MOSFET offers comparable performance to the IPG20N10S4L22AATMA1 with slightly different specifications.
  • FDP8878: A power MOSFET transistor with characteristics suitable for high-current applications like the IPG20N10S4L22AATMA1.

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

functionalPacking TAPE & REEL packageNameMarketing Dual SSO8
msl 1 halogenFree yes
customerInfo STANDARD fgr 506
productClassification COM productStatusInfo active and preferred
hfgr J packageName PG-TDSON-8
pbFree yes moistureProtPack NON DRY
orderingCode SP001091984 fourBlockPackageName PG-TDSON-8-10
rohsCompliant yes opn IPG20N10S4L22AATMA1
completelyPbFree no sapMatnrSali SP001091984

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