IPG16N10S461ATMA1

Name: IPG16N10S461ATMA1
Brand: Infineon
Rating: 4.5 (10 reviews)

Automotive-grade N-channel MOSFET capable of handling up to 100 volts and 16 amps of current, packaged in an 8-pin TDSON EP

Quantity	Unit Price(USD)	Ext. Price
1	$0.690	$0.69
10	$0.575	$5.75
30	$0.517	$15.51
100	$0.459	$45.90
500	$0.425	$212.50
1000	$0.407	$407.00

Inventory:8,844

*The price is for reference only.

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Part Number : IPG16N10S461ATMA1
Package/Case : TDSON-8
Brand : INFINEON
Components Classification : FET, MOSFET Arrays
Datesheet : IPG16N10S461ATMA1 DataSheet (PDF)
Series : IPG16N10S4-61

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Overview of IPG16N10S461ATMA1

The IPG16N10S461ATMA1 MOSFET, manufactured by Infineon Technologies, is a robust and efficient semiconductor device designed for high power handling in various applications. With a drain-source voltage of 100V and a continuous drain current of 16A, this MOSFET is well-suited for applications that require high frequency switching and high power efficiency. Its low on-resistance of 0.046 ohms and gate threshold voltage of 2V ensure efficient power management and minimal power loss during operation. The TO-220 package housing provides excellent thermal performance and easy mounting on circuit boards, with an additional heat sink tab for enhanced cooling if necessary. Whether used in power supply, motor control, or lighting applications, the IPG16N10S461ATMA1 MOSFET offers reliability and high efficiency, making it an ideal choice for demanding circuit designs

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer	Infineon	Product Category	MOSFET
RoHS	Details	Technology	Si
Mounting Style	SMD/SMT	Package / Case	TDSON-8
Transistor Polarity	N-Channel	Number of Channels	2 Channel
Vds - Drain-Source Breakdown Voltage	100 V	Id - Continuous Drain Current	16 A
Rds On - Drain-Source Resistance	53 mOhms, 53 mOhms	Vgs - Gate-Source Voltage	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage	2 V	Qg - Gate Charge	7 nC
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 175 C
Pd - Power Dissipation	29 W	Channel Mode	Enhancement
Qualification	AEC-Q101	Series	IPG16N10
Brand	Infineon Technologies	Configuration	Dual
Fall Time	5 ns, 5 ns	Height	1.27 mm
Length	5.9 mm	Product Type	MOSFET
Rise Time	1 ns, 1 ns	Factory Pack Quantity	5000
Subcategory	MOSFETs	Transistor Type	2 N-Channel
Typical Turn-Off Delay Time	5 ns, 5 ns	Typical Turn-On Delay Time	3 ns, 3 ns
Width	5.15 mm	Part # Aliases	IPG16N10S4-61 SP000892972
Unit Weight	0.003383 oz

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