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IPC50N04S5L5R5ATMA1

OptiMOS™ 5 QFN 5X6 40V

Inventory:5,539

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Overview of IPC50N04S5L5R5ATMA1

Discover the IPC50N04S5L5R5ATMA1, a high-performance N-Channel Mosfet designed by Infineon for automotive applications. With a continuous drain current of 50A and a drain-source voltage of 40V, this Mosfet is capable of handling high-power tasks with efficiency and reliability. Its low on-resistance of 0.0044Ohm minimizes power loss and heat generation, making it an ideal choice for automotive power management and switching applications. The threshold voltage of 1.6V allows for precise control over the Mosfet's operation, while its AEC-Q101 qualification ensures durability and performance in harsh automotive environments. In addition, the IPC50N04S5L5R5ATMA1 is RoHS compliant, reflecting Infineon's commitment to environmental sustainability. Whether it's for electric power steering, start-stop systems, or LED lighting, this Mosfet offers the performance and dependability needed for automotive applications

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Manufacturer Infineon Product Category MOSFET
RoHS Details Technology Si
Mounting Style SMD/SMT Package / Case TDSON-8
Transistor Polarity N-Channel Number of Channels 1 Channel
Vds - Drain-Source Breakdown Voltage 40 V Id - Continuous Drain Current 50 A
Rds On - Drain-Source Resistance 5.5 mOhms Vgs - Gate-Source Voltage - 16 V, + 16 V
Vgs th - Gate-Source Threshold Voltage 1.6 V Qg - Gate Charge 23 nC
Minimum Operating Temperature - 55 C Maximum Operating Temperature + 175 C
Pd - Power Dissipation 42 W Channel Mode Enhancement
Qualification AEC-Q101 Brand Infineon Technologies
Configuration Single Fall Time 6 ns
Product Type MOSFET Rise Time 2 ns
Factory Pack Quantity 5000 Subcategory MOSFETs
Typical Turn-Off Delay Time 8 ns Typical Turn-On Delay Time 2 ns
Part # Aliases IPC50N04S5L-5R5 SP001273424 Unit Weight 0.003919 oz

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