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IKW20N60TFKSA1

Advanced thyristor technology enables reliable switching and current sensing

Inventory:6,102

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Overview of IKW20N60TFKSA1

Infineon's IKW20N60TFKSA1 Insulated Gate Bipolar Transistor (IGBT) power module is engineered to deliver exceptional performance and reliability in high power switching applications. With a voltage rating of 600V and a current rating of 20A, this power module is well-suited for medium to high power applications, offering a low on-state voltage drop and fast switching speed for efficient power conversion and reduced power loss

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid IKW20N60TFKSA1 Pbfree Code Yes
Rohs Code Yes Part Life Cycle Code Active
Ihs Manufacturer INFINEON TECHNOLOGIES AG Part Package Code TO-247AC
Package Description FLANGE MOUNT, R-PSFM-T3 Pin Count 3
Reach Compliance Code compliant ECCN Code EAR99
Samacsys Manufacturer Infineon Case Connection COLLECTOR
Collector Current-Max (IC) 40 A Collector-Emitter Voltage-Max 600 V
Configuration SINGLE WITH BUILT-IN DIODE JEDEC-95 Code TO-247AC
JESD-30 Code R-PSFM-T3 JESD-609 Code e3
Number of Elements 1 Number of Terminals 3
Operating Temperature-Max 175 °C Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL Qualification Status Not Qualified
Surface Mount NO Terminal Finish TIN
Terminal Form THROUGH-HOLE Terminal Position SINGLE
Transistor Application POWER CONTROL Transistor Element Material SILICON
Turn-off Time-Nom (toff) 299 ns Turn-on Time-Nom (ton) 36 ns

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    Parts Quality Guarantee: 365 days

    Returns for refund: within 90 days

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