IHW25N120R2

Name: IHW25N120R2
Brand: INFINEON
Rating: 4.5 (10 reviews)

IGBT rated for 1200 volts and 50 amps, featuring reverse conduction capabilities

Quantity	Unit Price(USD)	Ext. Price
1	$1.701	$1.70
10	$1.480	$14.80
30	$1.341	$40.23
100	$1.199	$119.90
500	$1.135	$567.50
1000	$1.108	$1,108.00

Inventory:3,880

*The price is for reference only.

90-day after-sales guarantee
365 Days Quality Guarantee
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Part Number : IHW25N120R2
Package/Case : TO-247-3
Brand : INFINEON
Components Classification : Single IGBTs
Datesheet : IHW25N120R2 DataSheet (PDF)

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Overview of IHW25N120R2

IGBT NPT 1200 V 50 A 365 W Through Hole PG-TO247-3-1

Key Features

Powerful monolithic Body Diode with very low forward voltage
Body diode clamps negative voltages
Trench and Fieldstop technology for 1200 V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
Low EMI
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/

Application

POWER CONTROL

Specifications

The followings are basic parameters of the part selected concerning the characteristics of the part and categories it belongs to.

Source Content uid	IHW25N120R2	Pbfree Code	Yes
Rohs Code	Yes	Part Life Cycle Code	Obsolete
Ihs Manufacturer	INFINEON TECHNOLOGIES AG	Part Package Code	TO-247AC
Package Description	FLANGE MOUNT, R-PSFM-T3	Pin Count	3
Reach Compliance Code	compliant	ECCN Code	EAR99
Samacsys Manufacturer	Infineon	Case Connection	COLLECTOR
Collector Current-Max (IC)	50 A	Collector-Emitter Voltage-Max	1200 V
Configuration	SINGLE WITH BUILT-IN DIODE	Gate-Emitter Thr Voltage-Max	6.4 V
Gate-Emitter Voltage-Max	20 V	JEDEC-95 Code	TO-247AC
JESD-30 Code	R-PSFM-T3	Number of Elements	1
Number of Terminals	3	Operating Temperature-Max	175 °C
Package Body Material	PLASTIC/EPOXY	Package Shape	RECTANGULAR
Package Style	FLANGE MOUNT	Peak Reflow Temperature (Cel)	NOT SPECIFIED
Polarity/Channel Type	N-CHANNEL	Power Dissipation-Max (Abs)	365 W
Qualification Status	Not Qualified	Surface Mount	NO
Terminal Form	THROUGH-HOLE	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED	Transistor Application	POWER CONTROL
Transistor Element Material	SILICON	Turn-off Time-Nom (toff)	463.6 ns

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Parts Quality Guarantee: 365 days

Returns for refund: within 90 days

Returns for Exchange: within 90 days
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